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NOR gate type flash memory and its over-erasing verification and restoration method

A repair method and over-erasing technology, applied in static memory, read-only memory, information storage, etc., to achieve the effect of solving the problem of leakage current

Active Publication Date: 2016-03-09
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The NOR gate flash memory and its over-erasing verification and repair method in the embodiment of the present invention can solve the leakage current problem caused by over-erasing

Method used

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  • NOR gate type flash memory and its over-erasing verification and restoration method
  • NOR gate type flash memory and its over-erasing verification and restoration method
  • NOR gate type flash memory and its over-erasing verification and restoration method

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Embodiment Construction

[0019] In order to make the above-mentioned objects, features and advantages of the present invention more comprehensible, the following specific examples will be described in detail with reference to the accompanying drawings.

[0020] figure 1 It is an implementation manner illustrating a memory cell array (corresponding to a sector) in a NOR type flash memory (NOR typestack flash), and the reference number is 100 . During an erase operation, over-erased problems may occur. For example, take the memory cells in the first row (the memory cells connected to the data line BL1) as an example, if some memory cells in the first row are found to be difficult to erase during the erasing process, the memory cells in the first row will be continuously erased. All memory cells in the first row are erased until all memory cells in the first row are indeed erased. However, such an operation may cause over-erasing of other memory cells in the first row even though the non-erasable memor...

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Abstract

The invention discloses an NOR type stack flash and an over-erased verification and restoration method thereof. A sector of the NOR type stack flash is applied with over-erased column verification by the method for each column, and columns which cannot pass through the over-erased column verification undergo over-erased column restoration. Additionally, the columns which cannot pass through the over-erased column restoration and pass through the over-erased column verification are applied with over-erased bit verification for each bit, and bits which cannot pass through the over-erased bit verification undergo over-erased bit restoration. The NOR type stack flash and the over-erased verification and restoration method in the embodiment of the invention can solve a current leakage problem generated by over erase.

Description

technical field [0001] The invention relates to a NOR gate type flash memory (NORtypestackflash) and its over-erased (over-erased) verification and repair method. Background technique [0002] The design of the NOR flash memory includes an erase operation to clear the contents of all memory cells to the same value. However, in the erasing operation, some memory cells may be over-erased, causing the threshold voltage (threshold voltage) of the transistors (such as MOS) in these memory cells to be too low, which is easy to generate leakage current ( leakage). [0003] In order to solve the above-mentioned leakage current problem, it is necessary to deal with the above-mentioned over-erase problem accordingly. Contents of the invention [0004] An embodiment of the present invention provides a NOR gate flash memory and its over-erased verification and repair method. In the method, one sector of the NOR flash memory is verified by erasing rows row by row, and the row that f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
Inventor 黄仲盟河壬喆
Owner WINBOND ELECTRONICS CORP
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