Monitoring method of selective extension process
An epitaxy and selective technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of high monitoring costs and achieve the effect of reducing monitoring costs
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[0029] Since the prior art uses two semiconductor substrates to test the selectivity and thickness of the selective epitaxy process, the monitoring cost of the existing selective epitaxy process is relatively high. The invention utilizes two regions of the same semiconductor substrate to be monitored separately, thereby realizing the monitoring of the selectivity and thickness of the selective epitaxial process with one semiconductor substrate, and reducing the monitoring cost of the selective epitaxial process.
[0030] Specifically, for the selective epitaxy process monitoring method of the present invention, please refer to figure 1 As shown, the method includes:
[0031] Step S1, providing a semiconductor substrate, the semiconductor substrate is divided into a first area and a second area;
[0032] Step S2, forming a dielectric layer on the second area, the dielectric layer makes the second area have a certain color, which is different from the color of the first area;
[0033] S...
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