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Isotope battery with gallium-nitride-based multi-junction energy conversion unit

An isotope battery, gallium nitride-based technology, applied in the field of gallium nitride-based multi-junction transducing unit isotope batteries, can solve the problems of small short-circuit current and open-circuit voltage, low output performance, etc., and achieve the effect of small size

Inactive Publication Date: 2015-03-04
INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the low electrical output performance of radiovoltaic isotope batteries, especially the shortcomings of too small short-circuit current and open-circuit voltage, the invention provides a gallium nitride-based multi-junction transducing unit isotope battery

Method used

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  • Isotope battery with gallium-nitride-based multi-junction energy conversion unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] figure 1 It is a structural schematic diagram of a gallium nitride-based multi-junction transducing unit isotope battery of the present invention. figure 1 Among them, the gallium nitride-based multi-junction transducing unit isotope battery of the present invention contains a gallium nitride-based multi-junction transducing unit and auxiliary components; the transducing unit includes a sapphire substrate 18, a buffer layer 16, N gallium nitride Layer 14, N + GaN layer 15, i GaN layer 13, p + Gallium nitride layer 11, P gallium nitride layer 12, SiO 2 The protective layer 10, the front electrode 2 and the stepped electrode 5; the arrangement relationship of each part in the gallium nitride-based multi-junction transduction unit is, SiO 2 Protective layer 10, P + Gallium nitride layer 11, P gallium nitride layer 12, i gallium nitride layer 13, N gallium nitride layer 14, N gallium nitride layer + Gallium nitride layer 15, buffer layer 16, and sapphire substrate 18 a...

Embodiment 2

[0022] The basic structure and arrangement relationship of this embodiment are the same as those of Example 1, the difference is that the arrangement relationship of each part in the gallium nitride-based multi-junction transduction unit in this embodiment is, SiO 2 protective layer, N + GaN layer, N GaN layer, i GaN layer, P GaN layer, P + Gallium nitride layer, buffer layer, and sapphire substrate are arranged sequentially from top to bottom. + The front electrode is made on the surface of the gallium nitride layer and is not covered by SiO 2 protection cover, the P + The exposed annular surface of the gallium nitride layer is used to make step electrodes, which constitute the N + NiPP + GaN-based multi-junction transducer unit. P in this example + GaN layer doping concentration is 1×10 18 / cm 3 , P GaN layer doping concentration is 1×10 17 / cm 3 , the i gallium nitride layer is an unintentionally doped layer, and the doping concentration of the n gallium nitride l...

Embodiment 3

[0024] The basic structure and arrangement relationship of this embodiment are the same as those of Embodiment 1, except that the radiation source sheet 1 in this embodiment is an H-3 radiation source sheet.

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Abstract

The invention discloses an isotope battery with a gallium-nitride-based multi-junction energy conversion unit. The isotope battery comprises a gallium-nitride-based multi-junction energy conversion unit and auxiliary components. A positive electrode is formed on an upper P+-type layer or N+-type layer in the energy conversion unit, a step electrode is formed on a lower N+-type layer or P+-type layer, and the positive electrode and the step electrode are connected to a positive electrode pole and a negative electrode pole via a positive lead and a negative lead; a radioactive source sheet in the auxiliary components is arranged at the midpoint of the front surface of the energy conversion unit; all parts above are fixed at the midpoint of a base via insulating glue; each part arranged between the radioactive source sheet and the base is fixed via an inner packaging layer, and an outer packaging layer is covered on the periphery of the inner packaging layer; and the positive electrode pole and the negative electrode pole are vertical to the base and penetrate through the base, the inner packaging layer and the outer packaging layer. The isotope battery disclosed by the invention is small in shape, free from external energy supply during working, as well as capable of realizing 100 nA-1 muA short-circuit current and 0.8V-1.5V open-circuit voltage of output current, and keeping continuous current output for more than 6 years.

Description

technical field [0001] The invention belongs to the field of isotope batteries, in particular to a gallium nitride-based multi-junction transducing unit isotope battery. Background technique [0002] According to the radiovoltaic effect and the special properties of semiconductor junction devices, the decay energy of radioactive isotopes can be converted into electrical energy to make a radiovoltaic effect isotope battery. This kind of battery not only has the advantages of high energy density, long life, maintenance-free, and strong anti-interference of general isotope batteries, but also can achieve small volume and light weight, and its main part is semiconductor devices, which are easy to integrate with Other semiconductor devices are integrated together, so radiovoltaic isotope batteries become one of the best power supplies for tiny systems such as MEMS, ICs, and Internet of Things nodes. In recent years, with the vigorous development of MEMS, IC and the Internet of T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G21H1/06
Inventor 王关全杨玉青胡睿刘业兵徐建李昊张华明钟正坤罗顺忠
Owner INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF