Heat energy controlling method for melting process of single crystal furnace

A heat energy control, single crystal furnace technology, applied in the direction of single crystal growth, chemical instruments and methods, self-melting liquid pulling method, etc. The effect of reducing energy consumption, promoting sufficient heat absorption, and improving service life

Inactive Publication Date: 2012-08-01
ZHEJIANG HUAYOU ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method not only consumes a lot of heat energy, but also reduces the service life of the graphite heat field in the single crystal furnace

Method used

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Experimental program
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Embodiment Construction

[0006] The invention will be further described below in conjunction with specific embodiments.

[0007] After placing 100 kg of silicon material in the single crystal furnace, follow the steps below to control the thermal energy of the single crystal furnace:

[0008] A: Raise the temperature at a power of 40-45 kW / h, and keep the power constant for 15-30 minutes;

[0009] B: Raise the medium temperature at a power of 65-75 kW / h, and keep the power constant for 15-30 minutes;

[0010] C: Raise the temperature at a power of 75-85 kW / h, and keep a constant power; generally, the material starts to collapse after 4-5 hours.

[0011] D: After about 1 hour, when the melting material in the furnace reaches 3-5% (3-5 kg) of unmelted silicon material, reduce the power to medium temperature at a power of 65-75 kW / h and maintain a constant power of 30 ~60 minutes to melt all silicon materials;

[0012] E: start seeding.

[0013] Through the above, gradually increasing the power value...

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Abstract

The invention relates to a heat energy controlling method for a melting process of a single crystal furnace. After a silicon material is put into the single crystal furnace, the method comprises the following steps for controlling: (A), heating to a low temperature according to the power of 40 to 45 kilowatts per hour, and keeping a constant power for 15 to 30 minutes; (B), heating to a medium temperature according to the power of 65 to 75 kilowatts per hour, and keeping a constant power for 15 to 30 minutes; (C), heating to a high temperature according to the power of 75 to 85 kilowatts per hour, and keeping a constant power; D, when 3 to 5 percent of silicon material is not melted in the furnace, cooling to a medium temperature according to the power of 65 to 75 kilowatts per hour, and keeping a constant power for 30 to 60 minutes, so that the silicon material is completely melted; and E, seeding. By adopting the method, the power value is gradually improved for gradual heating of the single crystal furnace, the silicon material can be promoted to fully absorb heat, and a small part of silicon material is melted by using waste heat, so that energy consumption is reduced; and experimental results show that the service life of a graphite heat field is remarkably prolonged and can be prolonged from average 40 times of use to 70 times of use in the furnace.

Description

technical field [0001] The invention relates to a heat energy control method in the melting process of a single crystal furnace. Background technique [0002] At present, the melting process of the single crystal furnace adopts the direct heating method, that is, after the temperature of the single crystal furnace is directly raised from low temperature to high temperature, it starts until the silicon material is completely melted, and then continues to volatilize heat at high temperature for 30 to 60 minutes. , before cooling down, and then start seeding. This method not only consumes a lot of heat energy, but also reduces the service life of the graphite heat field in the single crystal furnace. Contents of the invention [0003] The purpose of the present invention is to provide a heat energy control method in the melting process of a single crystal furnace which can save heat energy and improve the service life of the graphite heat field. [0004] The technical solut...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B35/00
Inventor 汪昌伟陆昌忠
Owner ZHEJIANG HUAYOU ELECTRONICS
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