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Radiation image pickup apparatus and radiation image pickup/display system

An image pickup device, radiographic image technology, applied in radiation control devices, image communication, components of TV systems, etc., can solve the problem of crystal substrate size limitation, etc., to suppress the shift of threshold voltage and suppress the deterioration of transistor characteristics Effect

Inactive Publication Date: 2012-08-01
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The image pickup area of ​​such an image sensor is limited by the size of the crystalline substrate (silicon wafer)

Method used

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  • Radiation image pickup apparatus and radiation image pickup/display system
  • Radiation image pickup apparatus and radiation image pickup/display system
  • Radiation image pickup apparatus and radiation image pickup/display system

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0035] [structure]

[0036] figure 1 The overall structure of a radiation image pickup device (radiation image pickup device 1 ) according to one embodiment of the present invention is shown. The radiation image pickup apparatus 1 converts the wavelength of radiation generally including α-rays, β-rays, γ-rays, or X-rays into predetermined wavelengths and receives light with the converted wavelengths, and thus reads radiation-based image information. The radiation image pickup device 1 is preferably used as an X-ray image pickup device for medical use and for non-destructive inspection such as luggage inspection.

[0037] The radiation image pickup apparatus 1 has a pixel portion 10A on a substrate 11 and a circuit portion 10B for driving the pixel portion 10A in the periphery of the pixel portion 10A. An unillustrated wavelength conversion layer (a scintillator layer 22 described later) is provided on the pixel portion 10A. An adhesive pad 20 for external connection is prov...

Deformed example 1

[0080] Figure 7 The arrangement relationship between the circuit portion 10B and the scintillator layer 22 according to a modified example (modified example 1) of the first embodiment is shown. Also in this modified example, as in the first embodiment, the pixel portion 10A, the circuit portion 10B, and the wiring layer 10C are provided on the substrate 11 , and the scintillator layer 22 and the protective film 23 are formed on the pixel portion 10A. Hereinafter, the same reference numerals denote the same elements as those in the first embodiment, and the description thereof will not be repeated.

[0081] Incidentally, the modification differs from the first embodiment in the configuration of the circuit portion 10B with respect to the end portion 22 a of the scintillator layer 22 . In this modified example, the circuit portion 10B is provided inside the end portion 22 a of the scintillator layer 22 (on the side of the pixel portion 10A). Specifically, the pixel portion 10...

no. 2 approach

[0084] Figure 8A with Figure 8B The cross-sectional structures of the periphery of the pixel portion 10A according to the second embodiment of the present invention are respectively shown. Figure 8A shows along the figure 1 The cross-sectional structure of the I-I line in the middle, while Figure 8B A cross-sectional structure along line II-II is shown. In the present embodiment, as in the first embodiment, the pixel portion 10A and the circuit portion 10B are provided on the substrate 11 , and the scintillator layer 22 is provided on the pixel portion 10A. However, the present embodiment differs from the first embodiment in the arrangement relationship between the circuit portion 10B and the scintillator layer 22 . In addition, this embodiment differs from the first embodiment in that a shield layer 24 is provided on the circuit portion 10B. Hereinafter, the same reference numerals are used for the same elements as in the first embodiment, and repeated descriptions w...

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PUM

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Abstract

There are provided a radiation image pickup apparatus that may suppress deterioration of the transistor characteristic in the circuit in the periphery of the pixel section, and a radiation image pickup / display system including the apparatus. The radiation image pickup apparatus includes a pixel section provided on a substrate and having photoelectric conversion elements, a circuit section provided in the periphery of the pixel section on the substrate to drive the pixel section, and a wavelength conversion layer provided on the pixel section to convert a wavelength of radiation into a predetermined wavelength within a sensitivity range of the photoelectric conversion elements. The circuit section is provided in a region not facing an end of the wavelength conversion layer.

Description

technical field [0001] The present invention relates to a radiation image pickup device suitable for, for example, X-ray photography for medical use and non-destructive inspection, and a radiation image pickup / display system including the device. Background technique [0002] In recent years, CCD (Charge Coupled Device) image sensors or CMOS (Complementary Metal Oxide Semiconductor) image sensors have been widely used to acquire images as electrical signals (image pickup method using photoelectric conversion). The image pickup area of ​​such an image sensor is limited by the size of a crystalline substrate (silicon wafer). However, particularly in the medical field where X-rays are used for image pickup, it is necessary to increase the image pickup area. Furthermore, high video performance is increasingly required in the medical field. [0003] For example, the radiation image pickup device described below is used in a chest X-ray imaging device to directly generate electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/32
CPCH04N5/32H01L27/14663H04N25/30
Inventor 山田泰弘
Owner SONY SEMICON SOLUTIONS CORP