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Fast soft recovery diode and method for producing same

A production method and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of complex process, high processing difficulty and high product cost, and achieve the effects of good soft recovery characteristics, simple processing and low cost.

Active Publication Date: 2012-08-01
浙江博星电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But they all have the following problems: that is, they all carry out process transformation for the chip structure itself, which makes the process complicated, difficult to process, and high in product cost.

Method used

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  • Fast soft recovery diode and method for producing same
  • Fast soft recovery diode and method for producing same
  • Fast soft recovery diode and method for producing same

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Embodiment Construction

[0019] A fast soft recovery diode, composed of a parallel combination of two fast diodes. The reverse recovery time of each fast diode in the parallel combination has: trra = (0.1-0.9) trrb, where trra is the reverse of the larger fast diode Recovery time; trrb is the reverse recovery time of any other fast diode. The preferred trra=(0.3-0.5)trrb,

[0020] The invention combines a fast diode with a larger reverse recovery time trra and other fast diodes with a smaller reverse recovery time trrb in parallel to form a fast soft recovery diode, which has an improved softness factor S and good soft recovery characteristics.

[0021] The present invention will be described in detail below with reference to the drawings:

[0022] in image 3 with Figure 4 Among them, the reverse recovery time trr1=tA1+tB1, trr2=tA2+tB2, and the storage time tA1>tA2, the recombination time tB1>tB2, and the reverse peak current IRM1>IRM2.

[0023] in Figure 5 Among them, I3 is the reverse recovery current...

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Abstract

A fast soft recovery diode comprises at least two fast diodes which are connected in parallel. The fast soft recovery diode is characterized in that the reverse recovery time of the fast diodes in the parallel combination is trra= (0.1-0.9) trrb, wherein the trra refers to the reverse recovery time of one large fast diode, and the trrb refers to the reverse recovery time of optional one of the rest fast diodes. A method for producing the fast soft recovery diode is characterized in that at least two fast diodes conforming to the reverse recovery time trra= (0.1-0.9) trrb are parallelly combined to form the fast soft recovery diode. The fast soft recovery diode is simple in processing and low in cost, and has a soft recovery property.

Description

Technical field [0001] The invention relates to a fast soft recovery diode and a production method thereof. Background technique [0002] With the development of power electronics technology, the application of various frequency conversion circuits continues to expand. These circuits require fast diodes with short reverse recovery time, low reverse recovery charge, and soft recovery characteristics. figure 1 Shown is a typical inverter main circuit. During the switching and inverter conversion process, the interference generated when the output rectifier diode D1 or D2 is turned off. When the diode D1 or D2 has hard recovery characteristics, this kind of diode will produce a very high switching current or voltage burr at both ends of the switching tube IGBT under the resonance of transformer leakage inductance, junction capacitance and distributed capacitance, which is far more than The high reverse voltage applied will seriously interfere with the output of the circuit and the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329
Inventor 周立敬
Owner 浙江博星电子有限公司
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