Beam-film four-land structured micro-pressure high-overload sensor chip

A sensor chip, high overload technology, applied in the measurement of the property force of piezoresistive materials, etc., can solve the problems of staying, unable to adapt to the working environment in the aerospace field, and unable to meet the accurate measurement in the aerospace field.

Inactive Publication Date: 2013-12-04
XI AN JIAOTONG UNIV
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Problems solved by technology

[0003] With the development of aerospace technology, my country's current MEMS micro-pressure sensors are still mainly at the KPa level, which cannot meet the needs of the aerospace field for Pa-level micro-pressure measurement, nor can it adapt to the working environment of the aerospace field, and cannot meet the needs of the aerospace field. Requirements for precise measurement technology of deep and high-altitude micro-pressure

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  • Beam-film four-land structured micro-pressure high-overload sensor chip
  • Beam-film four-land structured micro-pressure high-overload sensor chip
  • Beam-film four-land structured micro-pressure high-overload sensor chip

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Embodiment Construction

[0021] The following describes the embodiments of the present invention in detail with reference to the drawings.

[0022] Reference figure 1 with figure 2 , A beam-membrane four-island structure micro-pressure high-overload sensor chip, including a silicon substrate 1 on which four mass blocks 4-1, 4-2, 4-3, 4-4 and four single beams are processed 3-1, 3-2, 3-3, 3-4 and cross beam 3-5, mass blocks 4-1, 4-2, 4-3, 4-4 pass four single beams 3-1, 3- 2, 3-3, 3-4 are connected with silicon substrate 1, masses 4-1, 4-2, 4-3, and 4-4 are connected by cross beams 3-5, connecting silicon substrate 1, mass 4 -1, 4-2, 4-3, 4-4, four single beams 3-1, 3-2, 3-3, 3-4 and the space enclosed by cross beams 3-5 are processed into 10-30μm film 2. The back side of silicon substrate 1 is bonded with Pyrex7740 glass 5, refer to image 3 , Figure 4 with Figure 5 , Thin the back of the mass blocks 4-1, 4-2, 4-3, 4-4, and make the vacuum between the mass blocks 4-1, 4-2, 4-3, 4-4 and Pyrex7740 glas...

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Abstract

The invention provides a beam-film four-land structured micro-pressure high-overload sensor chip comprising a silicon substrate, wherein four mass blocks, four single beams and a cross beam are processed on the silicon substrate. The mass blocks are connected with the silicon substrate through the single beams, and are interconnected by virtue of the cross beam; a film is arranged in a space defined by the silicon substrate, the mass blocks, the single beams and the cross beam; the back of the silicon substrate is bonded with Pyrex7740 glass; the backs of the mass blocks are thinned, so that a gap is reserved between the mass blocks and the Pyrex7740 glass, and simultaneously, four anti-adsorption electrodes on the Pyrex7740 glass are inserted into the bonding area; a cavity formed between the film, the mass blocks and the Pyrex7740 glass is vacuumized; four piezoresistor bars are interconnected to form a semi-open loop Wheatstone bridge on the front of the silicon substrate; the whole rigidity is improved by using the four single beams and the cross beam; the stress is concentrated again; and the beam-film four-land structured micro-pressure high-overload sensor chip has the characteristics of high sensitivity and linearity, and simultaneously can resist 500 times of high overload.

Description

Technical field [0001] The invention relates to the technical field of MEMS piezoresistive absolute pressure sensors, in particular to a micro-pressure high-overload sensor chip with a beam membrane four-island structure. Background technique [0002] With the development of micro-mechanical electronic system technology, MEMS micro-pressure sensors have been widely used in wind tunnel testing, biomedical and petrochemical fields, especially in aerospace, which has strict requirements on sensor volume and weight. MEMS The sensor is undoubtedly a very ideal choice. [0003] With the development of aerospace technology, my country’s current MEMS micro-pressure sensors mainly remain at the KPa level, which cannot meet the needs of the aerospace field for Pa-level micro-pressure measurement, nor can it adapt to the working environment in the aerospace field, and cannot meet the requirements of the aerospace field. The need for precise measurement technology of micro pressure in deep and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18
Inventor 赵玉龙于忠亮孟夏薇刘岩张学锋田边
Owner XI AN JIAOTONG UNIV
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