Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method for improving performance of industrial silicon thin-film cell component

A technology for battery components and silicon thin films, applied in electrical components, final product manufacturing, circuits, etc., to reduce pollution, improve battery efficiency, and improve photoelectric conversion efficiency

Inactive Publication Date: 2012-08-15
河北京碳能源有限公司
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This new technique allows for better utilization of solar energy without stopping production while maintaining high performance levels on batteries made from crystallized silicone films. It involves depositing an alkaline solution containing hydrogen peroxide onto the surface of the wafer before it reacts with gases at low temperatures (<100°C). By controllably adjusting certain parameters such as pressure during this step, we can create special structures called microcrystal domains that help trap impurities within these layers. These tiny areas allow more light into the device but less outside air enters through them due to their small size compared to other parts inside. Overall, this innovative approach helps improve cell module manufacturing processes and increase its overall photovoltaics ability.

Problems solved by technology

This patented technical problem addressed in this patents relates to how to efficiently remove unwanted materials such as silane gas that can accumulate inside an Al/Si cell due to incomplete removal caused by previous processes used beforehand.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for improving performance of industrial silicon thin-film cell component
  • Preparation method for improving performance of industrial silicon thin-film cell component
  • Preparation method for improving performance of industrial silicon thin-film cell component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention will be further described through the embodiments below in conjunction with the accompanying drawings.

[0013] This embodiment is to prepare a single-junction p / i / n type amorphous silicon thin-film solar cell, and use pre-deposited amorphous silicon thin film to reduce the pollution of the cell and improve the photoelectric conversion efficiency of the cell.

[0014] The present invention comprises the following steps:

[0015] First, transfer the deposited pin-type silicon thin film battery from the reaction chamber to the outside of the reaction chamber;

[0016] Second, use the plasma-enhanced chemical vapor deposition process to control the deposition power and the concentration of nitrogen trifluoride, and perform fluorine plasma etching and cleaning on the reaction chamber after the deposition of the battery;

[0017] Third, plasma-enhanced chemical vapor deposition is used to control the deposition power and silane concentration to remove ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method for improving the performance of an industrial silicon thin-film cell component and belongs to the technical field of the production of thin-film solar cells, and the problem of pollution of industrial silicon thin-film cells is solved by adopting pre-deposited amorphous silicon thin films. The technical scheme adopted by the invention is as follows: an amorphous silicon thin film pre-deposition process is introduced into a plasma cleaning/deposition process of a silicon thin-film cell preparation method, a plasma enhanced chemical vapor deposition process is adopted after a reaction chamber is etched and cleaned through fluorine plasma, the glow power and silane concentration are controlled, the amorphous silicon thin film is pre-deposited, and the concentration of fluorine, sulfur or oxygen remained in the reaction chamber is lowered, thus the photoelectric conversion efficiency of the industrial silicon thin-film cell component is increased. The preparation method for improving the performance of the industrial silicon thin-film cell component has the advantages that equipment has no need of being stopped, the transplanting efficiency of a system is not affected, the pollution is reduced, and meanwhile, the efficiency of a cell is effectively increased.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Owner 河北京碳能源有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products