High voltage direct current light emitting diode and its preparation method
A light-emitting diode, high-voltage DC technology, applied in electrical components, electric solid-state devices, circuits, etc., can solve the problem of large difference in light-emitting area, large influence of high-voltage DC light-emitting diode stability device structure, and comparison of current densities of multiple LED cores. Large and other problems, to achieve the effect of equal calorific value, equal current density and high light output rate
Inactive Publication Date: 2014-10-15
SOUTH CHINA NORMAL UNIVERSITY
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At present, high-voltage DC LED technology is under development. The main technology of high-voltage DC LED is to use multiple chips to form a total light-emitting diode, that is, multiple LEDs are connected in series to form an LED. Its technology belongs to the category of emerging technologies, and the technology is not yet mature. In the existing technology, there are mainly the following technical problems: (1) The current density difference of multiple LED chips is relatively large; (2) The light-emitting area of multiple LED chips varies greatly; (3) The high-voltage DC light-emitting diode is stable. The performance is greatly affected by the device structure
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[0021] The specific implementation of the present invention will be further described below in conjunction with the accompanying drawings, but the implementation and protection scope of the present invention are not limited thereto.
[0022] Such as figure 1 As shown, the high-voltage DC light-emitting diode includes a light-emitting part 1, a positive electrode and an n-type negative electrode connecting line 2, a core grain positive electrode line 3, a core grain n-type negative electrode 4, an end positive pole and an n-type negative electrode connecting line 5, a core Horizontal isolation channel 6 between grains, vertical isolation channel 7 between core grains, negative electrode pad 8 and positive electrode pad 9, wherein multiple LED core grains are made by epitaxial wafers, such as figure 2 The epitaxial wafer is composed of an epitaxial wafer substrate 10, an epitaxial wafer n-type layer 11, an epitaxial wafer light-emitting layer 12, and an epitaxial wafer p-type l...
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The invention discloses a high-voltage direct-current light-emitting diode and a preparation method thereof. The high-voltage direct-current light-emitting diode comprises a plurality of LED (Light-Emitting Diode) core particles, wherein the adjacent LED core particles are completely separated through a separation channel; the plurality of the LED core particles are connected in series; the LED core particles have the equal light-emitting area and the same shape; and a p-type anode and an n-type cathode of each core particle are the same in size and shape. According to the preparation method, a photoetched template is designed according to the structure and an LED epitaxial wafer is selected to manufacture the high-voltage direct-current light-emitting diode through a semiconductor plane process. Since the light-emitting areas of the LED core particles are uniform, a positive electrode and a negative electrode have no influences on the light-emitting areas of the plurality of the LED core particles, connecting lines of the positive electrode and the negative electrode have no influences on the light-emitting areas of the core particles, and the current density of each core particle is uniform and the like, the problems that the light extracting efficiencies are different, the generated heat energies are different and the like, which are caused by un-uniform light-emitting areas of the plurality of the LED core particles, are avoided; and meanwhile the high-voltage direct-current light-emitting diode has the advantages of high stability, high light extracting efficiency and the like.
Description
technical field [0001] The invention relates to the technical fields of semiconductors, luminescent materials, photoelectric devices, etc., and in particular relates to a high-voltage direct-current light-emitting diode and a preparation method thereof. Background technique [0002] White light-emitting diode (LED) technology mainly uses a single LED chip and YAG phosphor to synthesize white light, and the white light technology is becoming more and more mature. At present, high-voltage DC LED technology is under development. The main technology of high-voltage DC LED is to use multiple chips to form a total light-emitting diode, that is, multiple LEDs are connected in series to form an LED. Its technology belongs to the category of emerging technologies, and the technology is not yet mature. In the existing technology, there are mainly the following technical problems: (1) The current density difference of multiple LED chips is relatively large; (2) The light-emitting area ...
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IPC IPC(8): H01L27/15H01L33/00
Inventor 郭志友孙慧卿黄鸿勇王度阳朱明军
Owner SOUTH CHINA NORMAL UNIVERSITY