Method for directionally solidifying and purifying polycrystalline silicon by adopting ferro-silicon alloy
A technology of directional solidification and ferrosilicon alloy, which is applied in the direction of silicon compounds, chemical instruments and methods, non-metallic elements, etc., can solve the problems of reduction, achieve the effects of cost reduction, low melt temperature, and reduction of silicon loss
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Embodiment 1
[0027] 1) Soak industrial silicon powder with a purity of 2N in 4mol / L hydrochloric acid for 0.5h at room temperature to remove impurities in the silicon powder, then rinse it with deionized water and dry it.
[0028] 2) Put the silicon powder in 1) and the iron powder with a purity of 2N into the graphite crucible after mixing according to the mass ratio of 9:1, then put the graphite crucible into the directional solidification furnace, close the furnace cover, and evacuate to below 10Pa, Then pass high-purity argon.
[0029] 3) Turn on the induction heating power supply, gradually increase the heating power to make the temperature inside the crucible reach 1600°C, and then keep it warm for 1.5h.
[0030] 4) Set the temperature gradient in the vertical direction of the directional solidification furnace to 10°C / cm, start the directional solidification lifting device, and perform directional solidification at 10 mm / h to remove impurities in the silicon.
[0031] 5) Put the in...
Embodiment 2
[0036] Technological process is with embodiment 1. The addition of iron powder is 15%, and the rest is pretreated silicon powder; the melting temperature is 1590°C, and the holding time after melting is 2h; the temperature gradient in the vertical direction of the directional solidification furnace is 12°C / cm, and the directional solidification The speed is 15mm / h; the annealing temperature after directional solidification is 900°C, and the time is 4.5h. The alloy ingot obtained is cut off 30% of the upper part, and the remaining part is measured by a plasma inductively coupled mass spectrometer (ICP-MS). is 99.99952%. The removed 30% polysilicon can be recycled through the pickling process, and the specific process is the same as that in Example 1.
Embodiment 3
[0038] Technological process is with embodiment 1. Among them, the amount of iron powder added is 20%, and the rest is pretreated silicon powder; the melting temperature is 1650°C, and the holding time after melting is 1.5h; the temperature gradient in the vertical direction of the directional solidification furnace is 15°C / cm, and the directional solidification The speed of the directional solidification is 20mm / h; the annealing temperature after directional solidification is 950°C, and the time is 5h. The obtained alloy ingot cuts off 35% of the upper part, and the remaining part is measured by a plasma inductively coupled mass spectrometer (ICP-MS). is 99.99963%. The removed 35% polysilicon can be recycled through the pickling process, and the specific process is the same as that in Example 1.
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