Lithography alignment parameter prediction method and lithography method
A technology of lithography alignment and prediction method, which is applied in the field of lithography, can solve problems such as product rework and inability to accurately predict lithography alignment parameters, and achieve the effect of improving the success rate
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[0024] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0025] According to the present invention, a method for predicting lithography alignment parameters is provided, comprising:
[0026] Obtain the first weighted average (HS vector) and the first prediction accuracy parameter (RH) of the lithography alignment parameters of other layers of the same product similar to the current layer on the machine;
[0027] Obtain the second weighted average value (CE vector) and the second prediction accuracy parameter (RC) of the lithography alignment parameters of other products of the same technology platform as the current product on the machine; where the term "same technology platform ” means conforming to the same design dimension rules and using the same manufacturing process.
[0028] Obtain the result...
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