Unlock instant, AI-driven research and patent intelligence for your innovation.

Lithography alignment parameter prediction method and lithography method

A technology of lithography alignment and prediction method, which is applied in the field of lithography, can solve problems such as product rework and inability to accurately predict lithography alignment parameters, and achieve the effect of improving the success rate

Active Publication Date: 2016-03-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, if the lithographic alignment parameters of new products cannot be accurately predicted, the first (first) trial production batches will be reworked

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithography alignment parameter prediction method and lithography method
  • Lithography alignment parameter prediction method and lithography method
  • Lithography alignment parameter prediction method and lithography method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0025] According to the present invention, a method for predicting lithography alignment parameters is provided, comprising:

[0026] Obtain the first weighted average (HS vector) and the first prediction accuracy parameter (RH) of the lithography alignment parameters of other layers of the same product similar to the current layer on the machine;

[0027] Obtain the second weighted average value (CE vector) and the second prediction accuracy parameter (RC) of the lithography alignment parameters of other products of the same technology platform as the current product on the machine; where the term "same technology platform ” means conforming to the same design dimension rules and using the same manufacturing process.

[0028] Obtain the result...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a photoetching alignment parameter prediction method and a photoetching method. The photoetching alignment parameter prediction method comprises the following steps of: acquiring a first weighted average value and a first prediction accuracy parameter of a photoetching alignment parameter of other layers similar to the current layer of the same product on a machine; acquiring a second weighted average value and a second prediction accuracy parameter of the photoetching alignment parameter of the same layers of other products which have the same technical platform as the current product on the machine; acquiring a photoetching alignment daily observation result value and a third prediction accuracy parameter of the machine; and if the first prediction accuracy parameter is lower than a given threshold value, setting a photoetching alignment value to be equal to a number which accords with a formula of (the first weighted average value*the first prediction accuracy parameter +the second weighted average value*(1-the first prediction accuracy parameter)*the second prediction accuracy parameter) / (the first prediction accuracy parameter +(1-the first prediction accuracy parameter)*the second prediction accuracy parameter)-the result value*the third prediction accuracy parameter.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more specifically, the present invention relates to a method for predicting lithography alignment parameters and a lithography method using the method for predicting lithography alignment parameters. Background technique [0002] In the semiconductor wafer processing technology, the rework rate is a very important indicator for the photolithography process. About 13% of reworked wafers are due to the use of inappropriate photolithography alignment parameters during new product trial production, resulting in measurement exceeding the standard. [0003] Automatic feedback systems are widely used in photolithography processes for better control of photolithography alignment parameters. But for a factory with many kinds of products, there are still many problems. Specifically, this is because low-volume products do not provide sufficient data volumes to accurately predict the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F9/00G03F7/20
Inventor 陈蕾胡林鲍晔周孟兴
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP