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Multijunction solar cells formed on n-doped substrates

A technology of solar cells and substrates, which is applied in the field of development under research or development, and can solve problems such as the failure of solar cells to work normally.

Inactive Publication Date: 2012-09-12
SOLAR JUNCTION CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, doing this directly will result in a reverse orientation of the bottommost junction, which will prevent the solar cell from functioning properly

Method used

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  • Multijunction solar cells formed on n-doped substrates
  • Multijunction solar cells formed on n-doped substrates
  • Multijunction solar cells formed on n-doped substrates

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Embodiment Construction

[0019] Figure 4 The invention is shown. The "n-on-p" type solar cell device comprises an upper part 30 , a middle part 20 , and as a lower part 10 an n-type substrate. An additional tunnel junction 50 is deposited between the lower portion 10 and the middle portion 20, and the tunnel junction 50 substantially converts the n-doped surface of the substrate into p-doped material. Standard n-type semiconductor and metal contacts 11 can be fabricated as n-type substrate 10 .

[0020] DETAILED DESCRIPTION The use of dilute nitride subcells on the tunnel junction 50 results in a solar cell capable of absorbing longer wavelength energy without relying on the use of a substrate as part of the subcell structure. This embodiment is particularly advantageous because it combines the performance of longer wavelength subcells with a low cost n-type GaAs substrate where all base and emitter layers in the solar cell are lattice matched to each other. Diluted nitrides are generally considere...

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Abstract

An "n-on-p" type multijunction solar cell structure is disclosed using an n-type substrate for the epitaxial growth of III-V semiconductor material, wherein a "p-on-n" tunnel junction diode is disposed between the substrate and one or more heteroepitaxial layers of III-V semiconductor materials.

Description

[0001] Cross References to Related Applications [0002] This application is filed under 35 USC 119(e) on November 18, 2009, entitled "MULTIJUNCTION SOLAR CELLS FORMED ON N-DOPEDSUBSTRATES (Multijunction Solar Cells Formed on N-Doped Substrates)" The benefit of U.S. Provisional Application No. 61 / 262,374, which is hereby incorporated by reference in its entirety. [0003] Statement Concerning Rights to Inventions Made Under Federally Sponsored Research or Development [0004] Not applicable [0005] References to Computer Program Listing Attachments Submitted as "Sequence Listings," Tables, or on Compact Disc [0006] Not applicable Background technique [0007] The present invention relates to structures and techniques for constructing solar cells based on III-V materials such as gallium and arsenide. More specifically, the present invention relates to the problem of forming reliable conductive contacts for electrical terminals of devices or structures containing III-V ma...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L31/0687H01L31/1852Y02E10/544
Inventor 迈克尔·W·维摩侯曼·B·禺恩维基特·A·萨博尼斯迈克尔·J·谢尔登
Owner SOLAR JUNCTION CORP