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Semiconductor apparatus with overvoltage protection and bidirectional polar device based on apparatus

An overvoltage protection, semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of device damage, uneven current density of PN junction, etc., and achieve the effect of high reliability and high overcurrent bearing capacity

Active Publication Date: 2012-09-19
汇立装备制造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] It can be seen that during the conduction process of this kind of device, the PN junction current density between each N+ type region 3 and P type region 2 is not uniform, and the conduction first occurs in the N+ type region closest to the P+ type region 2 5 At the boundary of -3, the PN junction current density between the N+-type region-3 and the P-type region-2 will easily and quickly reach the critical value that the semiconductor material can withstand, resulting in device damage

Method used

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  • Semiconductor apparatus with overvoltage protection and bidirectional polar device based on apparatus
  • Semiconductor apparatus with overvoltage protection and bidirectional polar device based on apparatus
  • Semiconductor apparatus with overvoltage protection and bidirectional polar device based on apparatus

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Embodiment 1

[0034] Embodiment 1: as figure 2 As shown, a semiconductor device with overvoltage protection includes a substrate 9 of the first conductivity type,

[0035] A first region 10 of the second conductivity type provided on the upper part of the substrate 9,

[0036] a plurality of second regions 11 of the first conductivity type disposed on the top of the first region 10,

[0037] a third region 14 of the second conductivity type disposed on the lower surface of the substrate 9,

[0038] a first metal contact 15 connected to the first region 10 and the second region 11,

[0039] a second metal contact 16 connected to said third region 14;

[0040] The substrate 9 has a plurality of undulating areas 13 at the junction with the lower surface of the first area 10; the first area 10 forms a first opening area 12 between adjacent second areas 11, and each of the undulating areas 13 They are all correspondingly located in the middle of the first opening area 12 .

[0041] The fir...

Embodiment 2

[0045]Embodiment 2: A bidirectional polarity semiconductor device with overvoltage protection, which includes a substrate 9 of the first conductivity type,

[0046] a first region 10 disposed on the upper portion of the substrate 9 and having a second conductivity type,

[0047] a fourth region 17 of the second conductivity type disposed under the substrate 9,

[0048] a plurality of second regions 11 arranged on the upper part of the first region 10 and all of which are of the first conductivity type,

[0049] A plurality of fifth regions 18 arranged under the fourth region 17 and all of which are of the first conductivity type,

[0050] a first metal contact 15 connected to the first region 10 and the second region 11,

[0051] a third metal contact 19 connected to the fourth region 17 and the fifth region 18;

[0052] The substrate 9 has a plurality of undulating regions 13 at the junction with the lower surface of the first region 10; the substrate 9 has a plurality of ...

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Abstract

The invention relates to a semiconductor apparatus, and in particular relates to a semiconductor apparatus with overvoltage protection and a bidirectional polar device based on the apparatus. The invention is realized by the following scheme: the semiconductor apparatus with overvoltage protection comprises a substrate, a first area arranged on the substrate, a plurality of second areas arranged at the upper part of the first area, a third area arranged on the lower surface of the substrate, a first metal contact connected on the first area and the second area, and a second metal contact connected on the third area, a plurality of fluctuation areas are arranged at the junction of the lower surfaces of the substrate and the first area, and each fluctuation area corresponds to the middle of the second area. Compared with the background art, when the semiconductor apparatus is conducted, the current density of a PN knot close to the breakdown cathode and the cathode base region has difficulty in achieving the critical value endured by a semiconductor material, so that excess current endurance is improved, and the apparatus works more reliably.

Description

technical field [0001] The invention relates to a semiconductor device, especially a semiconductor device with overvoltage protection and a bidirectional polarity device based on the device. Background technique [0002] Known semiconductor devices with overvoltage protection have a region of lower breakdown voltage located near the junction between the adjacent cathode and anode base regions, as disclosed in U.S. Patent No. 4,282,555 to P. Svedberg Disclosed is a low-voltage protection method for a semiconductor device. [0003] This region has the same conductivity type as the cathode base region, but has a higher doping concentration than the cathode base region, and due to the high doping concentration of this region, the electric field strength of the PN junction between this region and the adjacent anode base region is higher than The electric field strength of the PN junction at the junction of the anode base region and the cathode base region, therefore, causes brea...

Claims

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Application Information

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IPC IPC(8): H01L29/45H01L29/06
Inventor 谢可勋西里奥·艾·珀里亚科夫
Owner 汇立装备制造有限公司
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