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Al4SiC4 material synthetic method

A synthesis method and material technology, applied in the field of ceramic materials, can solve the problems of complex process and high cost of material technology, and achieve the effects of simple process, reduced production cost and reduced firing time

Inactive Publication Date: 2013-12-11
SHANDONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the existing synthetic Al 4 SiC 4 The defects of high material technology cost and complex process, the invention provides an Al 4 SiC 4 Material preparation method

Method used

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  • Al4SiC4 material synthetic method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] a kind of Al 4 SiC 4 Synthesis method of materials. 55% of Al powder, 25% of SiC powder, and 20% of carbon black are weighed and proportioned according to mass percentage, and absolute ethanol is added until the material is submerged, fully mixed evenly on a planetary mill, and the obtained mixture is in Dry at 80°C. Compress the obtained mixture under a pressure of 300MPa, then bury the sample in a graphite crucible filled with metal aluminum powder, then put the graphite crucible into the furnace, heat it at 1600°C and keep it warm for 3 hours under the condition of carbon embedding. After cooling, take out the sample from the graphite crucible and remove the impurity layer on the surface to obtain Al 4 SiC 4 Material.

[0017] From figure 1 It can be seen that the phase of the synthesized material of the present invention is Al 4 SiC 4 .

Embodiment 2

[0019] a kind of Al 4 SiC 4 Synthesis method of materials. 65% of Al powder, 20% of SiC powder, and 15% of graphite are weighed and proportioned according to the mass percentage content, and absolute ethanol is added until the material is submerged, and the mixture is fully mixed evenly on the planetary mill, and the obtained mixture is at 80 ℃ drying. Compress the obtained mixture under a pressure of 250MPa, then bury the sample in a graphite crucible filled with metal aluminum powder, then put the graphite crucible into the furnace, heat it at 1650°C and keep it warm for 4 hours under the condition of carbon embedding. After cooling, take out the sample from the graphite crucible and remove the impurity layer on the surface to obtain Al 4 SiC 4 Material.

Embodiment 3

[0021] a kind of Al 4 SiC 4 Synthesis method of materials. 61% of Al powder, 22% of SiC powder, and 17% of graphite are weighed and proportioned according to the mass percentage content, and absolute ethanol is added until the material is submerged, and the mixture is fully mixed on the planetary mill, and the obtained mixture is at 80 ℃ drying. Add 3% phenolic resin of the weight of the mixture into the dried mixture as a binder, and press it under a pressure of 220MPa. After the product is treated at 240°C, the sample is buried in a graphite crucible containing metal aluminum powder. , and then put the graphite crucible into the furnace under the condition of burying carbon, heat it at 1600°C and keep it warm for 3 hours. After cooling, take the sample out of the graphite crucible and remove the impurity layer on the surface to obtain Al 4 SiC 4 Material.

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Abstract

The invention relates to an Al4SiC4 material synthetic method. An employed technical scheme comprises the following steps by weight percentage: taking 45-65% of Al powder, 20-35% of SiC powder, 15-30% of powdered carbon and uniformly mixing with absolute alcohol while planetary ball milling, drying under the temperature of 80-120 DEG C, shaping, then imbedding a sample in a graphite crucible equipped with metal aluminum powder, placing the graphite crucible in a furnace, under the imbed carbon condition, heating and insulating for 2-7 hours under the temperature of 1500-1700 DEG C, cooling and removing the sample from the graphite crucible and then removing an impurity layer on the surface to obtain the Al4SiC4 material. According to the invention, the material can be synthesized without protection atmosphere of vacuum or inert gas and the like, the technology is simple, the synthesis temperature is low, the obtained product possesses high yield and purity, and is adapted to large scale production. The product can be used for ceramic matrix components, and can be used as an additive to be introduced to a carbonaceous refractory material for increasing its antioxidation performance.

Description

technical field [0001] The invention belongs to the field of ceramic materials. Specifically relate to a kind of Al for refractory material 4 SiC 4 materials and their synthesis methods. Background technique [0002] al 4 SiC 4 With high melting point, high chemical stability, high strength, low thermal expansion coefficient and very excellent high temperature strength, oxidation resistance and hydration resistance, it is a promising high temperature structure and high performance refractory material to be developed. At present, Al is synthesized at home and abroad 4 SiC 4 The material is mainly based on metal (Al+Si), oxide (Al 2 o 3 +SiO2 2 ) and carbon powder as raw materials (Itatani.K, Takahashi.F, et al, Densification and micro-structural developments during the sintering of aluminum silicon carbide. Journal of Material Science, 2002, 37: 335-342.), or carbonized matter (Al 4 C 3 +SiC) as a raw material (Roger Wills, Steve Goodrich, The Oxidation of Aluminu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/00C01B31/30C01B32/90
Inventor 阮国智张智慧尹明强徐海森徐国纲
Owner SHANDONG UNIV OF SCI & TECH
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