Power semiconductor module and power electronic device applying same

A power semiconductor and circuit technology, which is used in output power conversion devices, conversion of AC power input to AC power output, electrical components, etc. problems, to achieve the effect of reducing circuit volume, reducing power consumption, and reducing the number of modules

Active Publication Date: 2012-10-17
INVT POWER ELECTRONICS SUZHOU CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a power semiconductor module and power electronic equipment using it, which effectively solves t

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  • Power semiconductor module and power electronic device applying same
  • Power semiconductor module and power electronic device applying same
  • Power semiconductor module and power electronic device applying same

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[0028] For the sake of reference and clarity, the descriptions, abbreviations or abbreviations of technical terms used in the following are summarized as follows:

[0029] IGBT: Insulated Gate Bipolar Transistor, insulated gate bipolar transistor.

[0030] FWD: Freewheeling diode, freewheeling diode.

[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0032] The present invention provides a power semiconductor module and a frequency converter using the same, including an upper bridge arm cir...

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Abstract

The invention provides a power semiconductor module and a power electronic device applying the same. The power semiconductor module comprises an upper bridge arm circuit, a box-shaped first outer shell for containing the upper bridge arm circuit, a lower bridge arm circuit and a box-shaped second outer shell for containing the lower bridge arm circuit, wherein the upper bridge arm circuit and the box-shaped first outer shell for containing the upper bridge arm circuit are independently packaged into a first module, and the lower bridge arm circuit and the box-shaped second outer shell for containing the lower bridge arm circuit are independently packaged into a second module, i.e. each phase of a three-level frequency converter formed by the semiconductor module provided by the invention only comprises two modules. Compared with the number of modules of each phase of the frequency converter in the prior art, the number of the modules of the frequency converter of the invention is reduced, circumscribed connecting circuits needed between the modules are reduced, the power consumption of each module is further reduced, and at the same time the size of the mutually connected circuits of the three-level frequency converter formed by the semiconductor module provided by the invention is reduced, so that the cost of manufacture is reduced.

Description

technical field [0001] The present invention relates to a power electronic system, more specifically to a power semiconductor module and power electronic equipment using the same. Background technique [0002] Three-level inverters have been widely used in the field of electrical transmission, among which, the three-level inverter topology provides an effective way for the realization of high-voltage, high-power inverters. At present, the traditional three-level inverter topology mainly includes a plurality of clamping diodes and a plurality of switching elements, wherein each switching element is composed of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) connected in antiparallel and Freewheeling diode (FWD), and each phase of the three-level inverter topology includes 2 clamping diodes and 4 switching elements. Usually, 2 clamping diodes are packaged together and called a diode module. Encapsulating two switching elements together is called...

Claims

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Application Information

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IPC IPC(8): H02M5/45
Inventor 申大力
Owner INVT POWER ELECTRONICS SUZHOU CO LTD
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