Word line leakage detecting method, system and storage media of Nor type flash memory device

Abstract

The invention relates to a word line leakage detecting method, a system and a storage media of a Nor type flash memory device, and particularly discloses a self detection method, a detection system and the storage media capable of being read by a computer of the leakage in a word line. A high voltage supply unit and a voltage detector connected with the word line originally existing in the flash device can be utilized, the high voltage supply unit applies test signals to the selected word line, the voltage detector detects the voltage signals of the word line, and when the voltage signals are inferior to the test signals, the word line is in electric leakage by comparing the test signals with the voltage signals.

Description

technical field [0001] The present invention relates to a self-test method, system and computer-readable storage medium of a Negative OR (NOR) flash memory device, and more particularly to a self-test method for internal leakage of a word line of a NOR flash memory device, The system and the computer can read the storage medium. Background technique [0002] With the continuous development of semiconductor process technology, the integration of components in semiconductor memory is also increasing day by day, and the tiny defects generated in the process will become the key to affect whether the memory fails or not. In recent years, fault detection, used to detect memory, has become an integral and standard step in the process. [0003] see figure 1 , is a schematic diagram of the leakage path of the word line leakage in the NOR flash memory. figure 1 Among them, the memory cell array 3 has a plurality of memory cells, each memory cell has a corresponding local word line ...

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Problems solved by technology

[0004] There are various reasons for leakage in NOR flash memory, such as: word line leakage P1 (between adjacent word lines), junction leakage P2 (between gate and source / drain), or word line driver Its own leakage P3, etc., such leakage conditions will cause the flash memory to be unable to be successfully programmed, erased, written or read

Traditionally, the test of memory is to analyze and confirm the leakage location through the steps of erasing / programming / reading by external devices. However, in actual testing, it is easy to waste testing time (testing overhead) and test results are not accurate. The correct situation is because it is difficult to clearly know the location of the leakage from the external memory test, and it is easy to overtest in order to obtain more correct results during the test

Therefore, existing memory test method has many inconveniences and shortcoming

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