Manufacturing method of voltage division ring of plane high-voltage transistor
A technology of high-voltage transistors and manufacturing methods, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of high chip cost, and achieve the effect of reducing chip cost, improving voltage size, and reducing ring spacing
Active Publication Date: 2015-01-07
CHENGDU SILAN SEMICON MFG
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Problems solved by technology
The size of the ring spacing between the voltage divider ring and the main junction has relatively little impact on the cost of large-size transistors, but has a great impact on the cost of small-size transistors. For example, for a chip with a size of 1mm×1mm, the distance between the voltage divider ring and the main junction The ring spacing may occupy 10% of the total chip area, and for higher voltage planar high-voltage transistors, two or more voltage divider rings may be required, and the area occupied by the voltage divider rings will lead to excessive chip cost
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[0040] The content of the present invention will be further described below in conjunction with the accompanying drawings.
[0041] A method for manufacturing a voltage divider ring of a planar high-voltage transistor, wherein the main junction and the voltage divider ring of the planar transistor are formed in different processes, including the following steps:
[0042] (1) The main junction of the planar high-voltage transistor is formed on the N layer by a diffusion process, as shown in Figure 2(a);
[0043] (2) SiO for planar high-voltage transistors 2 layer is photolithographically etched, the SiO 2 The layer forms the partial pressure ring window, as shown in Figure 2(b);
[0044] (3) Oxidize the voltage divider ring window of the planar high-voltage transistor, as shown in Figure 2 (c);
[0045] (4) Implanting a small dose of boron into the divider ring window of the planar high-voltage transistor, as shown in Figure 2(d);
[0046] (5) Perform implantation and annea...
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The invention provides a manufacturing method of voltage division rings of a plane high-voltage transistor. A main node and the voltage division rings are formed in different processes. In the invention, the plane high-voltage transistor formed by adopting the method has small occupying area of the voltage division rings, and the cost of the plane high-voltage transistor is reduced; the impurity concentration of the voltage division rings is approximate to epitaxial concentration, and the voltage division rings are ensured to be exhausted when a PN node is reversely biased in voltage; electric fields of the voltage division rings are much higher than the electric fields of the voltage division rings formed by the traditional process method in intensity, the voltage division rings have small spacing, and the average electric field intensity of a voltage division ring region is greatly enhanced under the condition of keeping maximum avalanche electric field intensity E unchanged, and therefore, voltage magnitude born at an average unit dimension is improved, the dimensions of the voltage division rings needed by the plane high-voltage transistor are finally greatly reduced under same voltage and chip cost is further reduced; and ring spacings of the voltage division rings and the main node are greatly reduced, and therefore, the widths of the voltage division rings can be designed according to minimum photoetching dimensions.
Description
technical field [0001] The invention relates to the withstand voltage technology of planar high-voltage transistors, in particular to the design technology of voltage-dividing rings of planar high-voltage transistors. Background technique [0002] Bending of the terminal PN junction of planar high-voltage transistors usually causes electric field concentration, causing the breakdown voltage of planar high-voltage transistors to be much lower than the theoretical value. In planar high-voltage transistors, voltage divider rings are often used to reduce surface electric field strength and improve breakdown voltage. [0003] The voltage divider ring and the main junction of the conventional planar high-voltage transistor are formed at the same time, and the implementation steps are as follows: [0004] (1) SiO for planar high-voltage transistors 2 Photolithography and etching are performed on the layer to form the main junction window and the voltage divider ring window, as sho...
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IPC IPC(8): H01L21/18H01L29/06
Inventor 王英杰吴贵阳崔健王平
Owner CHENGDU SILAN SEMICON MFG