Induction heating device

Abstract

[Problem] To provide an induction heating device whereby no heat temperature difference arises in the obverse and reverse faces of a wafer, and with which it is possible, even when a metallic film, etc., is formed on the obverse face of the wafer, to eliminate lack of uniformity in temperature distribution or burn damage to the metallic film caused by the wafer proper emitting heat. [Solution] An induction heating device comprises: a susceptor (18) which is positioned opposite one primary face of a wafer (16); a susceptor (20) which is positioned opposite the other primary face thereof; one group of inductive heating coils (22) which is positioned on the reverse face side of the susceptor (18) to the face thereof which is opposite the wafer (16); another group of inductive heating coils (24) which is positioned on the reverse face side of the susceptor (20) to the face thereof which is opposite the wafer (16), and which is symmetric about the wafer (16) with the one group of inductive heating coils (22); and a power supply unit (14), which is connected to inductive heating coils (22a-22f, 24a-24f) of the one group of induction heating coils (22) and the other group of inductive heating coils (24) in parallel, and in a position relationship which is symmetric about a plane with respect to the wafer (16), such that the phase of the applied current is reversed.

Description

technical field [0001] The invention relates to an induction heating device, in particular to an induction heating device suitable for monolithic processing of a semiconductor substrate. Background technique [0002] As an induction heating device for heat-treating a monolithic semiconductor, the purpose of which is to control the temperature distribution in the surface of a semiconductor substrate with high precision. The present applicant proposes a technique disclosed in Patent Document 1. [0003] A schematic configuration of the induction heating device disclosed in Patent Document 1 is as follows. A plurality of annularly formed induction heating coils are arranged adjacently, and the input power of each heating coil can be controlled, the heating coils setting the heating range as a single heating area. A susceptor as a heating element is disposed on the upper surface of the induction heating coil. A wafer as an object to be heated is disposed on the upper surface o...

AI Technical Summary

Problems solved by technology

However, even in this case, when the heating control of the front surface and the back surface are performed independently of each other, there is a problem that the temperature distribution of the wafer surface and the back surface becomes uneven.

In addition, when heating a wafer with a metal film on its surface, the wafer itself is heated by induction due to the influence of the leakage magnetic flux, which may cause the heating balance of the entire wafer to collapse, or the metal film may be burned.

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