Back side illuminated image sensor with improved stress immunity
An image sensor and backside technology, applied in the field of backside illuminated image sensors and their manufacturing, can solve the problems of difficulty in calculating leakage current and increasing leakage current, etc.
Active Publication Date: 2015-03-11
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
Stress applied to the silicon substrate can increase leakage current, and changes in stress can make leakage current calculations more difficult
[0004] Thus, while existing BSI pattern sensing devices generally serve their intended purpose, they are not entirely satisfactory in every respect.
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[0029] It should be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, this is just an example and is not intended to limit the present invention. In addition, in the following description, the formation of the first component on or over the second component may include an embodiment in which the first component and the second component are in direct contact, and may also include an embodiment in which an additional component is interposed between the first component and the second component. An embodiment of the component such that the first component and the second component are not in direct contact. Various features may be arbitrarily drawn in different scales for simplicity and clarity.
[0030] figure 1 is a flowchart illustrating a method 10 of fabricating a ba...
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Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.
Description
technical field [0001] The present invention generally relates to a backside illuminated image sensor and a method of manufacturing the same. Background technique [0002] Semiconductor image sensors are commonly used to sense radiation such as light. Complementary Metal Oxide Semiconductor (CMOS) Image Sensors (CIS) and Charge Coupled Devices (CCD) are widely used in various applications, such as in digital cameras or mobile phone cameras. The devices described above use an array of pixels in a substrate, including photodiodes and transistors that absorb radiation directed at the substrate and convert the sensed radiation into electrical signals. [0003] A backside illuminated (BSI) image sensing device is one type of image sensing device. This BSI image sensor device is able to detect the light projected from its backside by operation. BSI image sensor devices have a relatively thin silicon substrate (eg, a few microns thick) in which light-sensitive pixels are formed....
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IPC IPC(8): H01L27/146H01L31/0352
CPCH01L27/14636H01L27/14623H01L27/1464H01L27/146
Inventor 周耕宇杨敦年刘人诚陈保同王文德庄俊杰高敏峰
Owner TAIWAN SEMICON MFG CO LTD