A soi-based giant piezoresistive effect micro-gyroscope

Abstract

The invention discloses an SOI-based giant piezoresistive effect micro-gyroscope, which mainly comprises: a bonded substrate and a micro-gyroscope angular rate sensitive body. A rectangular bottom groove is etched in the middle of the upper surface of the bonding substrate; the micro-gyroscope angular rate sensitive body is arranged on the upper surface of the bonding substrate and connected with the bonding substrate. The micro-gyroscope angular rate sensitive body further includes: fixed comb-teeth electrode positive poles distributed on the left and right upper surfaces of the bonding substrate; comb-teeth electrode negative poles distributed on the front and rear sides; Tooth structure; the fixed seat provided on the upper surface of the negative electrode of the comb-toothed electrode; corresponding to the sensitive mass block above the bottom groove, damping holes are evenly distributed on the upper surface of the sensitive mass block; the sensitive mass block is connected to the fixed seat through a composite beam; the composite beam The root of the detection beam is equipped with a silicon nanowire resistor as a sensitive mechanism. The micromechanical gyroscope according to the embodiment of the present invention adopts an overall structural design, has a reasonable and compact structure, a simple detection circuit, is convenient to use, has good reliability, and is suitable for miniaturization.

Description

technical field [0001] The invention relates to the research field of key components of micro-inertial navigation, in particular to an SOI-based micromechanical gyroscope with giant piezoresistive effect. Background technique [0002] At present, the commonly used detection methods for micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is based on the principle of piezoresistive effect of highly doped silicon. Since the resistance gauge coefficient of silicon piezoresistors is small, with the sensor size The varistors of the traditional doping process can no longer meet the requirements of modern high-sensitivity testing; the improvement of capacitive precision is to increase the capacitance area. Due to the miniaturization of the device, its accuracy is reduced by the reduction of the effective capacitance area. Difficult to improve. [0003] The measurement of the angular velocity of the micro-mechanical gyroscope is completed by the det...

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Problems solved by technology

[0002] At present, the commonly used detection methods for micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is based on the principle of piezoresistive effect of highly doped silicon. Since the resistance gauge coefficient of silicon piezoresistors is small, with the sensor size The varistors of the traditional doping process can no longer meet the requirements of modern high-sensitivity testing; the improvement of capacitive precision is to increase the capacitance area. Due to the miniaturization of the device, its accuracy is reduced by the reduction of the effective capacitance area. Difficult to improve

[0003] The measurement of the angular velocity of the micro-mechanical gyroscope is completed by the detection device to realize the force-electric conversion. Its sensitivity and resolution are very important. Due to the miniaturization and integration of the gyroscope, the sensitive area of ​​the detection is reduced accordingly, so the detection The sensitivity, resolution and other indicators of gyroscopes have reached the limit state of sensitive area detection, which limits the further improvement of gyroscope detection accuracy, and it is difficult to meet the needs of modern military and civilian equipment.

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