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Novel multilayer film for improving extreme ultraviolet (EUV) spectral purity

A technology of extreme ultraviolet light and multi-layer film, which is applied in the field of extreme ultraviolet lithography, can solve problems affecting the quality of lithography, and achieve the effect of suppressing out-of-band bands

Inactive Publication Date: 2012-11-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0008] In summary, the wavelength range of 160nm-240nm is the maximum range of photoresist sensitivity in the out-of-band band, and the exposure of photoresist in this band will affect the quality of photolithography.

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  • Novel multilayer film for improving extreme ultraviolet (EUV) spectral purity
  • Novel multilayer film for improving extreme ultraviolet (EUV) spectral purity
  • Novel multilayer film for improving extreme ultraviolet (EUV) spectral purity

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Embodiment Construction

[0017] The present invention will be further described in detail below in conjunction with the drawings and embodiments.

[0018] A new type of multi-layer film that improves the purity of extreme ultraviolet spectrum. The multi-layer film includes: a substrate and a periodic Mo / Si multilayer film, as well as an SPE layer; the periodic Mo / Si multilayer film is fabricated on the substrate, and the SPE layer Fabricated on periodic Mo / Si multilayer film.

[0019] The materials of the SPE layer are mainly C, SiC and Si 3 N 4 Since most materials have high absorption coefficients in the extreme ultraviolet band, the thickness of the SPE layer should not be too thick, generally around 9-12nm, and 10nm is the most preferred thickness. Different extreme ultraviolet photoresists have different out-of-band sensitivity bands. The material, thickness and combination of the SPE layer are changed to meet the requirements of different photoresists for the suppression of out-of-band bands.

[0020]...

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Abstract

The invention discloses a novel multilayer film for improving extreme ultraviolet (EUV) spectral purity, belonging to the field of EUV lithography. The multilayer film can enable the reflectivity of an out-off-band waveband to be effectively inhibited on the premise that the reflectivity loss of a position of 13.5 nm is guaranteed to be little. The novel multilayer film comprises a substrate and a Mo / Si multilayer film as well as an SPE (spectral purity enhancing) layer, wherein the Mo / Si multilayer film is formed on the substrate, and the SPE layer is formed on the Mo / Si multilayer film. According to the novel multilayer film for improving the EUV spectral purity, the SPE layer is formed on the basis of not changing the shape of a film system, not additionally arranging optical elements and not increasing additional processing steps, and the imaging quality and lithographing quality of a lithography system are improved through inhibiting the out-off-band waveband under the condition that the reflectivity loss can be neglected.

Description

Technical field [0001] The invention belongs to the field of extreme ultraviolet lithography, and specifically relates to a novel multilayer film for improving extreme ultraviolet spectral purity. Background technique [0002] Extreme ultraviolet lithography is the next generation lithography technology most likely to achieve the 22nm technology node. The extreme ultraviolet lithography system uses a wavelength of 13.5nm. In this waveband, most materials have high absorption coefficients, so only a total reflection system can be used. In order to further shorten the exposure time and increase the yield, it is necessary to plate a high-precision multilayer film on the optical element to increase the reflectivity. The multilayer film preferably plated in the extreme ultraviolet band is a Mo / Si multilayer film with a cycle number of 40-60 and a cycle thickness of 6.9-7.2 nm. Although the periodic Mo / Si multilayer film has a high reflectance at 13.5nm (up to 68%), its cut-off bandw...

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Application Information

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IPC IPC(8): G02B1/10G03F7/20B32B33/00
Inventor 金春水祝文秀匡尚奇李春
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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