Photoelectric conversion element and photoelectric converter

A technology for photoelectric conversion elements and charges, applied in electrical components, electric solid-state devices, circuits, etc., can solve the problems of image quality degradation, photodiodes are easily affected by optical noise, etc. The effect of suppressing false detections
CN102800735AInactive Publication Date: 2012-11-28SONY SEMICON SOLUTIONS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SONY SEMICON SOLUTIONS CORP
Publication Date
2012-11-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer. The photoelectric conversion element can reduce the influence of the optical noise.
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Description

[0001] Cross References to Related Applications

[0002] The present invention includes the disclosure content of the Japanese prior patent application JP 2011-177460 submitted to the Japan Patent Office on August 15, 2011 and the disclosure of the Japanese prior patent application JP 2011-119502 submitted to the Japan Patent Office on May 27, 2011 These prior applications are hereby incorporated by reference in their entirety to the subject matter to which the disclosure relates. technical field

[0003] The present invention relates to a photoelectric conversion element suitable for use in, for example, a radiographic imager and a touch sensor, and a photoelectric conversion device using the photoelectric conversion element. Background technique

[0004] In recent years, PIN (Positive Intrinsic Negative Diode) photodiodes have emerged as photoelectric conversion elements for use in radiation imaging devices and contact sensors. These PIN-type photodiodes have a so-called ...

Claims

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