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Photoelectric conversion element and photoelectric conversion device

A technology of photoelectric conversion elements and photoelectric conversion devices, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problems of image quality degradation, photodiodes are easily affected by optical noise, etc., and achieve the suppression of resolution reduction and reduction Influence and suppress the effect of false detection

Inactive Publication Date: 2017-10-24
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, if p-type, n-type, and i-type semiconductor layers are stacked one above the other to form a PIN-type photodiode such as that described in Japanese Laid-Open Publication No. 2011-14752, the photodiode may be susceptible to optical noise. Impact
Use of such photodiodes in e.g. radiographic imaging devices can cause image quality degradation

Method used

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  • Photoelectric conversion element and photoelectric conversion device
  • Photoelectric conversion element and photoelectric conversion device
  • Photoelectric conversion element and photoelectric conversion device

Examples

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Deformed example

[0034] 6. Modification 4 (Example of deriving a signal from the lower side (n-type semiconductor layer))

Embodiment

[0036] structure

[0037] figure 1 A schematic structure of a photodiode (photodiode 1 ) according to an example of the present invention is shown. The photodiode 1 is a photoelectric conversion element for generating charges (photocharges) corresponding to the light amount of incident light (received light) and storing the generated charges inside it. The photodiode 1 is a PIN photodiode in which an i-type semiconductor layer (intrinsic semiconductor layer) is interposed between a p-type semiconductor layer and an n-type semiconductor layer.

[0038] The photodiode 1 has, for example, a p-type semiconductor layer 122 , an i-type semiconductor layer 123 , and an n-type semiconductor layer 124 stacked in this order from the side of a substrate 11 made of glass or other materials. More specifically, in the photodiode 1 , the p-type semiconductor layer 122 is provided in a selected region on the substrate 11 (more precisely, on an insulating film 121 described later). A first ...

Deformed example 1

[0071] Figure 7 A cross-sectional structure of a photodiode (photodiode 1A) of this modified example is shown. Like the photodiode 1 in the above-described embodiment, the photodiode 1A is also a PIN type photodiode, and has a p-type semiconductor layer 122C, an i-type semiconductor layer 123 and an n-type semiconductor layer 124 stacked in this order from the substrate 11 side. More specifically, the p-type semiconductor layer 122C is provided in selected regions on the substrate 11 . The first interlayer insulating film 112A is provided to have a contact hole H1 opposite to the p-type semiconductor layer 122C. The second interlayer insulating film 112B having the contact hole H2 is provided on the n-type semiconductor layer 124 and the first interlayer insulating film 112A. The upper electrode 125 is connected to the n-type semiconductor layer 124 through the contact hole H2. Furthermore, a light shielding layer 120B is provided between the p-type semiconductor layer 122...

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Abstract

The present invention relates to a photoelectric conversion element and a photoelectric conversion device. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type disposed on a substrate; a second semiconductor layer of a second conductivity type, the second semiconductor layer being disposed at a layer higher than the first semiconductor layer Middle; a third semiconductor layer of a third conductivity type, the third semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, and the conductivity of the third semiconductor layer is lower than that of the a first semiconductor layer and the second semiconductor layer; and a light shielding layer disposed between the substrate and the first semiconductor layer. The photoelectric conversion element of the present invention can reduce the influence of optical noise.

Description

[0001] Cross References to Related Applications [0002] The present invention includes the disclosure content of the Japanese prior patent application JP 2011-177460 submitted to the Japan Patent Office on August 15, 2011 and the disclosure of the Japanese prior patent application JP 2011-119502 submitted to the Japan Patent Office on May 27, 2011 These prior applications are hereby incorporated by reference in their entirety to the subject matter to which the disclosure relates. technical field [0003] The present invention relates to a photoelectric conversion element suitable for use in, for example, a radiographic imager and a touch sensor, and a photoelectric conversion device using the photoelectric conversion element. Background technique [0004] In recent years, PIN (Positive Intrinsic Negative Diode) photodiodes have emerged as photoelectric conversion elements for use in radiation imaging devices and contact sensors. These PIN-type photodiodes have a so-called ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105
CPCH01L31/105H01L27/14663H01L31/02164
Inventor 山田泰弘田中勉高德真人伊藤良一千田满
Owner SONY SEMICON SOLUTIONS CORP
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