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Method for improving clearness of alignment marks

An alignment mark and clarity technology, applied in the field of improving alignment mark clarity, can solve problems such as alignment failures in lithography steps, and achieve the effect of eliminating alignment failures and improving accuracy

Active Publication Date: 2013-01-02
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for improving the definition of alignment marks, so as to overcome the influence of the epitaxial layer on the definition of the bottom layer laser marks, and avoid the problem of alignment failure in subsequent photolithography steps

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  • Method for improving clearness of alignment marks
  • Method for improving clearness of alignment marks
  • Method for improving clearness of alignment marks

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Embodiment Construction

[0027] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. It should also be noted that, for ease of description, only steps related to the present invention are shown in the drawings but not all processes.

[0028] image 3 It is a flow chart of the method for improving the definition of alignment marks provided by the first embodiment of the present invention. Such as image 3 As shown, the method includes:

[0029] Step 301 , etching an alignment mark on the surface of the wafer.

[0030] In one embodiment of the present invention, it can be as figure 1 As shown, a laser is used to etch the alignment mark, and a cross-shaped alignment mark is punched at predetermined positions on the upper, lower,...

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Abstract

The invention provides a method for improving clearness of alignment marks. The method includes etching an alignment mark on the surface of a wafer; growing an epitaxial layer on the wafer; and removing a portion of the epitaxial layer grown above the alignment mark so as to expose the alignment mark on the surface of the wafer. The method has the advantages that one-step photoetching and etching are added after the epitaxial layer is grown, and the epitaxial portion with the alignment mark of a bottom layer is etched to expose the mark of the bottom layer, so that the clear and visible alignment mark is provided for follow-up photoetching steps, and the problem of unsuccessful alignment is eliminated.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for improving the definition of alignment marks. Background technique [0002] In the front-end process of semiconductor device manufacturing, wafer processing needs to go through: laser first marking (Zero Mark), epitaxial layer growth (EPI), shallow trench isolation structure photolithography (SDG PHOTO) and other process steps. Wherein, setting the alignment mark on the surface of the wafer by laser can provide the alignment mark of the front layer for the subsequent photolithography step of the shallow trench isolation structure. In the process of photolithography, if misalignment is caused by misalignment, it will cause pattern distortion or misregistration, which will eventually affect the electrical characteristics of the manufactured semiconductor device. Therefore, it is very important to maintain the clarity of alignment marks throug...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L23/544G03F9/00
Inventor 胡骏
Owner CSMC TECH FAB2 CO LTD
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