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Wear leveling method and system of Nand Flash

A wear leveling and linked list technology, applied in the storage field, can solve problems such as increasing system overhead and wear, and achieve the effects of simplicity and convenience, saving CPU resources, and improving service life

Active Publication Date: 2015-05-20
ZHEJIANG UNIV
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Problems solved by technology

[0006] The other is a static wear leveling algorithm that statically balances the erasure times of all physical blocks by adjusting the data stored on the physical block (hot data that is frequently erased and cold data that is not frequently erased), and periodically exchanged For cold data and hot data, the static wear leveling algorithm solves the problem that the dynamic algorithm ignores cold data, but frequent adjustment of hot and cold data will undoubtedly increase system overhead and bring a lot of additional wear and tear

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  • Wear leveling method and system of Nand Flash
  • Wear leveling method and system of Nand Flash
  • Wear leveling method and system of Nand Flash

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Embodiment Construction

[0034] In order to describe the present invention more specifically, the method and system of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0035] A method to achieve wear leveling of Nand Flash. Before we start, we need to define ME, which is used to record the maximum number of block erasures. The maximum number of block erasures is the number of erasures of the block with the largest number of erasures in Nand Flash; set the hot and cold The threshold R of the degree and the starting frequency F of the cold block processing program; the selection of the threshold is very important. If the threshold is selected too large, it may cause the cold blocks to be replaced to be greater than the number of free blocks, and cannot be completely replaced; if the threshold is selected too small, It will cause the cold block not to be released in time, which will affect the effect of wear leveling; in this...

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Abstract

The invention discloses a wear leveling method of a Nand Flash. The method comprises the following steps of: counting the erasure frequency of each Block in the Nand Flash, and calculating the hot degree of each Block; allocating all Blocks into an EDOL, an HSL or a CSL according to data storage information and the hot degree; starting a cold block processing program at fixed time; and when data are written into the Nand Flash, selecting a plurality of Blocks with the minimum erasure frequency from an idle block chain table, and writing the data into the Blocks. The invention also discloses a system for implementing the method. The system comprises the EDOL, the HSL, the CSL, a counting module, a data writing module, a dirty block recovery module, a cold block processing module and an allocating module. By the invention, the erasure frequency of each Block in the Nand Flash can be effectively leveled, and the service life of the Nand Flash is prolonged.

Description

technical field [0001] The invention belongs to the technical field of storage, and in particular relates to a method and a system for realizing wear leveling of Nand Flash. Background technique [0002] Flash memory (Flash Memory) is a commonly used storage medium in embedded systems. It is a non-volatile, shockproof, and energy-saving storage device. Nand Flash is the main non-volatile flash memory chip currently on the market. Its unique structure can provide extremely high cell density, can achieve high storage density, and its writing and erasing speed is also fast. [0003] A flash memory is generally composed of several flash memory blocks (blocks), and each flash memory block is further divided into several physical pages (pages). A page is the smallest unit of writing data, and a block is the smallest unit of erasing data. Data in a page cannot be written repeatedly, and can only be rewritten after the block containing the page is erased. The erasing times of eac...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/06G06F13/18
Inventor 李红姜旭峰李坤程士庆陈浩杰吴朝晖
Owner ZHEJIANG UNIV
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