Check patentability & draft patents in minutes with Patsnap Eureka AI!

Storage control method, device, equipment and computer storage medium

A technology of storage control and storage area, which is applied in computing, instrumentation, electrical digital data processing, etc., and can solve the problems of low service life of NAND-Flash storage devices and inability to effectively balance the number of erasures

Pending Publication Date: 2020-05-05
SANECHIPS TECH CO LTD
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in related technologies, the storage control technology for NAND-Flash storage devices cannot effectively balance the erasing times of each physical block, resulting in a low service life of NAND-Flash storage devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage control method, device, equipment and computer storage medium
  • Storage control method, device, equipment and computer storage medium
  • Storage control method, device, equipment and computer storage medium

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0061] The first embodiment of the present invention proposes a storage control method, which can be applied to a storage device, where the storage device may be a NAND-Flash storage device or other storage devices.

[0062] figure 1 It is a schematic flow chart of a storage control method according to an embodiment of the present invention, such as figure 1 As shown, the process can include:

[0063] Step 101: In the storage area of ​​the storage device, determine the SLC area adopting the single-layer storage SLC mode and the XLC area adopting the non-single-layer storage XLC mode.

[0064] Here, all physical blocks of the storage device can be divided into SLC area and XLC area, and the SLC area and XLC area are blocks adopting two different storage modes. The physical blocks in the SLC area are stored in the SLC mode. For example, when the XLC mode is the MLC mode, the capacity of each physical page in the SLC area is the same as the capacity of each physical page in the...

no. 2 example

[0079] In order to better reflect the purpose of the present invention, further illustrations are given on the basis of the first embodiment of the present invention; in the second embodiment of the present invention, the XLC mode is the MLC mode.

[0080] Figure 4 It is a schematic flow chart of the initialization of the FTL layer and the write instruction of the embodiment of the present invention, such as Figure 4 As shown, the process can include:

[0081] Step 401: Perform a system initialization operation for the storage device.

[0082] Step 402: Determine whether the storage device is powered on for the first time, if yes, perform step 403, and if not, perform step 405.

[0083] Step 403: Divide the entire space (the entire storage area) of the storage device into an SLC area (SLC area for short) and an MLC area, divide the MLC area into a cold pool and a hot pool, and then perform step 404 .

[0084] Step 404: Initialize all physical block information and node in...

no. 3 example

[0185] On the basis of the contents described in the foregoing embodiments, further illustrations are given.

[0186] In the third embodiment of the present invention, when the operation mode of the continuous write operation is the first operation mode, and the first trigger condition is that the amount of garbage data in the SLC area exceeds the second set threshold Th_garbage, the data garbage in the SLC area recycling process and Figure 7 The flow shown is the same and will not be repeated here.

[0187] When the operation mode of the continuous write operation is the first operation mode, and the second trigger condition is that the data existence time of the physical block with the longest data existence time in the SLC area exceeds the set duration, an exemplary data migration process can be as follows Figure 9 shown.

[0188] Figure 9 It is a schematic diagram of another data migration process in the embodiment of the present invention, such as Figure 9 As show...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a storage control method, a device, equipment and a computer storage medium, and the method comprises the steps: determining an SLC region employing an SLC mode and an XLC region employing an XLC mode in a storage region of the storage equipment; when garbage collection occurs in the SLC area or resources in the SLC area are insufficient, recycling the garbage; selecting reasonable physical blocks in the SLC area for data emigration according to joint judgment of attributes such as age and recovery times of the data in the SLC, selecting physical blocksunder corresponding conditions in the SLC area or the XLC area as data migration target physical blocks, and migrating effective data in the SLC area into the target physical blocks; and when any physical block in the SLC area is erased, configuring the mode adopted by the erased physical block to be an XLC mode, and configuring the mode adopted by the empty physical block with the smallest erasure frequency in the XLC area to be an SLC mode.

Description

technical field [0001] Embodiments of the present invention relate to, but are not limited to, NAND-Flash storage control technology, and in particular, relate to a storage control method, device, equipment and computer storage medium, which can be used to realize the design of the NAND-Flash flash memory conversion layer. Background technique [0002] With the vigorous development of new services and applications such as cloud computing, Internet of Things, big data, and high-performance computing, the demand for data access has reached an unprecedented height, which has brought huge challenges to data storage. Compared with hard disk storage, NAND-Flash storage has many obvious advantages, such as fast reading speed, strong concurrency, low power consumption, small size, good impact resistance, etc., and has been widely used in the field of mobile consumer devices. , and even enterprise-class storage systems. For example, portable storage Secure Digital Memory Card (SD ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0616G06F3/0629G06F3/0679
Inventor 程晨曾文琪王思宇叶联渲
Owner SANECHIPS TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com