Method for manufacturing tunable laser and optical amplifier monolithic integrated device
A technology for tuning lasers and optical amplifiers, applied to laser parts, lasers, semiconductor lasers, etc., to reduce the number of epitaxy, reduce device manufacturing costs, and improve device performance
Active Publication Date: 2013-01-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
It can be seen that the docking growth technology and the offset quantum well structure can effectively improve the performance of tunable lasers, but there is no effective combination of the two in the current published literature.
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[0019] see Figure 1-Figure 5 As shown, the present invention provides a method for manufacturing a monolithic integrated device of a tunable laser and an optical amplifier, comprising the following manufacturing steps:
[0020] Step 1: Select a substrate 10;
[0021] Step 2: On the substrate 10, the gain region quantum well material layer 20 is epitaxially grown, and the gain region quantum well material layer 20 is divided into first and second grating regions 1, 4, gain region 2, phase region 3 and amplification region 5;
[0022] Step 3: selectively corroding the first and second grating regions 1 and 4, the gain region quantum well material layer 20 at the positions of the phase region 3 and the amplification region 5, and retaining the gain region quantum well material layer 20 in the gain region 2;
[0023] Step 4: growing a phase region material layer 30 and a quantum well material layer 40 sequentially on the first and second grating regions 1 and 4, the phase region...
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The invention discloses a method for manufacturing a tunable laser and optical amplifier monolithic integrated device. The method comprises the following steps of: selecting a substrate; epitaxially growing a gain area quantum well material layer on the substrate, wherein the gain region quantum well material layer is divided into a first grating area, a second grating area, a gain area, a phase area and an amplifier area; selectively corroding the gain region quantum well material layer comprising the first and second grating areas, the phase area and the amplifier area, and remaining the gain region quantum well material layer in the gain area; sequentially growing a phase area material layer and a quantum well material layer in the first and second grating areas, the phase area and the amplifier area; selectively corroding an amplifier quantum well material layer beyond the amplifier area; manufacturing grating on the surface of the phase area body material layer in the first and second grating areas; and growing a contact layer on a structure where the gratings are manufactured. The body material which can be independently optimized and is required in the grating areas and the phase area is obtained by utilizing junction growth, and a quantum well material used for manufacturing a high-saturation output power amplifier is obtained.
Description
technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a method for manufacturing a monolithic integrated device of a tunable laser and an optical amplifier. Background technique [0002] Tunable lasers are essential key devices in optical communication systems. To replace the fixed-wavelength DFB laser with a tunable laser, you only need to purchase the same tunable laser as a system light source backup, and adjust it to the corresponding wavelength when using it, so you only need to prepare a small number of tunable lasers to adjust to the corresponding wavelength. Just go up. This greatly reduces the types of lasers required and the quantity of purchases, simplifies management, and greatly saves costs. In addition, tunable lasers can also be used in multiple aspects such as rebuildable optical branching multiplexers, wavelength conversion and optical routing, and packet switching. [0003] Wide wavelength tunable range and...
Claims
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Inventor 梁松赵玲娟朱洪亮王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI