Wafer processing method of low-impedance 49/S low-frequency quartz-crystal resonator
A quartz crystal and wafer processing technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of low impedance specification and unsatisfactory, and achieve the effect of reducing impedance
Active Publication Date: 2015-07-22
LANGFANG CHINA ELECTRONICS PANDA CRYSTAL TECH +1
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Problems solved by technology
These have been unable to meet the low impedance specifications required by the market
Method used
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[0014] A wafer processing method, comprising the following process steps:
[0015] 1) Take the rectangular wafer stick to be cut, put the chamfered top surface (+X side) of the rectangular wafer stick up, and use a trapezoidal iron block to shape the rectangular wafer stick into the front of the rectangular wafer stick (Z surface) and the side (Y surface) form a rhombus at 85 o (such as image 3 );
[0016] 2) Install the diamond-shaped 85o sticky crystal block on the cutting board, the chamfered top surface (+X surface) of the crystal block is facing upward, and the front side (Z surface) of the crystal block is parallel to the cutting line, that is, the Z axis of the crystal block Make an angle of 85 o with the cutting line, and cut vertically downward along the X-axis of the crystal block (such as Figure 4 );
[0017] 3) After cutting the wafer, grind the two opposite cutting surfaces in parallel to the required size. After melting, it can be seen that the side (Y surfa...
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The invention discloses a wafer processing method of a low-impedance 49 / S low-frequency quartz-crystal resonator. The wafer processing method of the low-impedance 49 / S low-frequency quartz-crystal resonator comprises the following steps of: (1) putting a top face chamfer of a long square wafer sticky lump towards the upside; shaping the long square wafer sticky lump into a rhombus by using a trapezoid iron block, wherein the front face of the rhombus forms an included angle of 85 degrees with the side face of the long square wafer sticky lump; (2) mounting a wafer block of the rhomboidal 85-degree sticky lump on a cutting plate, and cutting vertically downwards along the X axis of the wafer block, wherein the front face of the wafer block is parallel to a cutting line, namely, the Z axis of the wafer block forms an included angle of 85 degrees with the cutting line; and (3) after the wafer block is cut, parallel grinding the lumps on two opposite cutting faces to needed sizes, wherein the side face of the wafer forms an included angle of 85 degrees with the front face of the wafer after the lumps are ground. The wafer processing method of the low-impedance 49 / S low-frequency quartz-crystal resonator has the advantages that the processed wafer is in rhombus, and the front face forms the included angle of 85 degrees with the side face of the wafer, so that the side face of the wafer forms an included angle of 90 degrees with the opposite face of the front face; and under the same frequency, the edge of the wafer is thinned due to the included angle, an edge effect is eliminated, the energy consumption of wafer vibration is reduced, and the impedance of the quartz-crystal resonator is reduced.
Description
technical field [0001] The invention relates to a wafer processing method for a low-impedance 49 / S low-frequency quartz crystal resonator, belonging to the technical field of quartz crystal resonators. Background technique [0002] To meet the needs of energy saving and consumption reduction, electronic components are required to have lower impedance. For quartz crystal resonators, the lower the frequency, the higher the impedance. The existing wafer processing technology can no longer make the impedance lower. The existing 49 / S low-frequency quartz wafer processing method adopts the side wire cutting method balanced with the Y axis to process the external dimensions. The low-frequency crystal resonator made of the produced quartz wafer has high impedance. For example, 3.5MHz can only meet the 150ohms specification. 4.0MHz can only meet the 100ohms specification, and 6.0-8.0MHz can only meet the 70ohms specification. These have been unable to meet the low impedance specific...
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IPC IPC(8): H03H3/04
Inventor 杜知清
Owner LANGFANG CHINA ELECTRONICS PANDA CRYSTAL TECH