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Dynamic memory refreshing circuit and method thereof

A technology of dynamic memory and new method, applied in static memory, digital memory information, information storage and other directions, can solve the problems of data leakage and long interval, and achieve the effect of improving reliability

Active Publication Date: 2013-03-06
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

due to time T 1 may occur at any time, so wordline W n It is easy to have an excessively long interval between the time point of being re-refreshed and the time point of the previous burst re-refresh action BR, resulting in the word line W n The data stored in the memory cells on the

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  • Dynamic memory refreshing circuit and method thereof
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  • Dynamic memory refreshing circuit and method thereof

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Embodiment Construction

[0034] Please refer to figure 2 , figure 2 It is a schematic diagram of an embodiment of the refresh circuit of the dynamic memory of the present invention. The re-refresh circuit 200 includes a controller 210 and a re-refresh signal generator 220 . The controller 210 is coupled to the re-refresh signal generator 220 . The controller 210 is used for transmitting the self-refresh enable signal SREN to the re-refresh signal generator 220 when the dynamic memory is about to enter the self-refresh mode.

[0035] After the re-refresh signal generator 220 receives the self-refresh enable signal SREN, it starts the self-refresh mode according to the self-refresh enable signal SREN, and after the self-refresh mode is activated, it first performs burst re-refresh for the memory cell array 230 of the dynamic memory. action. After the burst re-refresh action is completed, the re-refresh signal generator 220 will calculate a delay time, and after a delay time, re-refresh one bit lin...

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Abstract

The invention discloses a dynamic memory refreshing circuit and a method thereof. The refreshing circuit comprises a controller and a refreshing signal generator, wherein the controller transmits a self-refreshing starting signal; and the refreshing signal generator starts a self-refreshing mode according to the self-refreshing starting signal, and the memory cell array of the dynamic memory undergoes burst mode refreshing and then undergoes distribute mode refreshing when the self-refreshing mode of the refreshing signal generator is started. The dynamic memory refreshing circuit and the method can improve the reliability of the dynamic memory.

Description

technical field [0001] The invention relates to a re-refreshing circuit and method of a dynamic memory. Background technique [0002] Due to its architecture, a dynamic random access memory (DRAM) needs to use a refresh action (refresh) to maintain the correctness of the data stored in its memory cells. In the known technology, the re-refresh operation can be performed by a so-called burst mode re-refresh method or a distributed mode (distribute mode) re-refresh method. [0003] In the auto-refresh phase of the dynamic memory, the burst re-refresh method is adopted, and when it is switched from the auto-refresh phase to the self-refresh phase, the re-refresh action is controlled Switch to the distributed re-refresh method. Please refer to figure 1 , figure 1 It is a schematic diagram of a re-refresh state of a known dynamic memory. where, when at time T 1 , the dynamic memory switches from the automatic refresh stage to the self-refresh stage, and starts the distribute...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/402
Inventor 林哲民
Owner WINBOND ELECTRONICS CORP