Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and manufacturing method thereof

A technology of semiconductor and board structure, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as damage to semiconductor integrated circuits

Active Publication Date: 2015-08-26
MACRONIX INT CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, once the current generated by ESD flows through the semiconductor integrated circuit, the semiconductor integrated circuit is usually damaged

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] figure 1 A top view of a semiconductor structure in an embodiment is shown. figure 2 draw figure 1 A cross-sectional view of the semiconductor structure along the line AB. image 3 A top view of a semiconductor structure in an embodiment is shown. Figure 4 draw image 3 Cross-sectional view of the semiconductor structure along the CD line. Figure 5 A top view of a semiconductor structure in an embodiment is shown. Image 6 draw Figure 5 Cross-sectional view of the semiconductor structure along line EF. Figure 7 A top view of a semiconductor structure in an embodiment is shown. Figure 8 draw Figure 7 A cross-sectional view of the semiconductor structure along the line GH. Figure 9 and Figure 10 An equivalent circuit of a semiconductor structure according to an embodiment is shown.

[0038] Please refer to figure 2 , the semiconductor structure includes a first doped region 12 , a second doped region 14 and a third doped region 16 . The first doped ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure and a manufacture method thereof. The semiconductor structure comprises a first doped region, a second doped region, a third doped region and a resistor, each of the first doped region and the third doped region is provided with a first conductivity type, the second doped region is provided with a second conductivity type opposite to the first conductivity type, the first doped region is separated from the third doped region through the second doped region, the resistor is coupled between the second doped region and the third doped region, an anode is coupled to the first doped region, and a cathode is coupled to the third doped region.

Description

technical field [0001] The present invention relates to semiconductor structures and manufacturing methods thereof, in particular to electrostatic discharge protection circuits. Background technique [0002] Electrostatic discharge (ESD) is the phenomenon of transfer of electrostatic charge between different objects and accumulation of electrostatic charge. The time for ESD to occur is very short, only within a few nanoseconds. Very high currents are generated during an ESD event, typically in the order of a few amperes. Therefore, once a current generated by ESD flows through the semiconductor integrated circuit, the semiconductor integrated circuit is generally damaged. Therefore, when a high voltage (HV) electrostatic charge is generated in the semiconductor integrated circuit, the ESD protection device between the power lines must provide a discharge path to prevent the semiconductor integrated circuit from being damaged. Contents of the invention [0003] The prese...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L21/822
Inventor 陈信良陈永初吴锡垣
Owner MACRONIX INT CO LTD