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Substrate processing apparatus and film deposition apparatus

A substrate processing device and substrate technology, which are applied in gaseous chemical plating, coating, electrical components, etc., and can solve problems such as inability to solve

Active Publication Date: 2013-03-13
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned problems are not described in the above-mentioned patent documents, and this problem cannot be solved.

Method used

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  • Substrate processing apparatus and film deposition apparatus
  • Substrate processing apparatus and film deposition apparatus
  • Substrate processing apparatus and film deposition apparatus

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Embodiment Construction

[0022] figure 1 is a longitudinal sectional side view of the film forming apparatus 1, figure 2 is a perspective view of the film forming apparatus 1, image 3 It is a cross-sectional plan view of the film forming apparatus 1 .

[0023] The film forming apparatus 1 is used to perform atomic layer deposition (ALD) and molecular layer deposition (MLD) on a wafer W as a substrate. The film forming apparatus 1 includes a substantially circular flat vacuum vessel (processing vessel) 11 , a circular turntable 2 horizontally installed in the vacuum vessel 11 , a rotation drive mechanism 14 , a heater 41 as a heating unit, and a shield 42 . , Exhaust port 36.

[0024] The vacuum container 11 is provided in the atmospheric atmosphere, and it includes: a top plate 12; a container main body 13, which constitutes the side wall and the bottom of the vacuum container 11; a sealing member 11a, which is used to keep the inside of the vacuum container 11 airtight; a cover 13a, It is used ...

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Abstract

A substrate processing apparatus includes a process chamber; a turntable rotatably provided in the process chamber for mounting a substrate on one surface of the turntable and including a substrate mounting portion at which the substrate is to be mounted and a table body which is an other portion of the turntable, the substrate mounting portion being configured to have a heat capacity smaller than that the table body; and a heater that heats the substrate from an opposite surface side of the turntable.

Description

technical field [0001] The invention relates to a substrate processing device and a film forming device. Background technique [0002] As a film-forming method in a semiconductor manufacturing process, a process is known in which a first reaction gas is adsorbed on the surface of a semiconductor wafer (hereinafter referred to as "wafer") or the like as a substrate in a vacuum atmosphere, and then the resulting The supplied gas is switched to the second reaction gas, and the two gases react to form one or more atomic layers and molecular layers, and this cycle is repeated multiple times to stack the above-mentioned layers and form a film on the substrate. This process is called, for example, atomic layer deposition (ALD: Atomic Layer Deposition), molecular layer deposition (MLD: Molecular Layer Deposition), or the like. [0003] This film-forming method can be applied, for example, to forming a silicon oxide film or a high-dielectric film used for a gate oxide film. As an e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/46H01L21/67H01L21/205
CPCH01L21/67109H01L21/68771H01L21/67103C23C16/45551C23C16/46H01L21/68764C23C16/45548C23C16/4585C23C16/401
Inventor 榎本忠大泉行雄本间学
Owner TOKYO ELECTRON LTD