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Capacitor structure applicable to integrated circuit

A capacitive structure, integrated circuit technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of small space, reduced capacitor capacitance value, capacitor capacitance value reduction, etc.

Active Publication Date: 2015-07-01
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the increase of the integration of semiconductor components, the size of the components is gradually reduced, and the space as a capacitor is relatively smaller and smaller (it is forced to reduce the chip area available for the capacitor plate), and therefore reduces the capacitance value of the capacitor
And after entering the deep sub-micron (deep sub-micron) process, the problem of the reduction of the capacitance value of the capacitor is even more serious

Method used

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  • Capacitor structure applicable to integrated circuit
  • Capacitor structure applicable to integrated circuit
  • Capacitor structure applicable to integrated circuit

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Embodiment Construction

[0038] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. In addition, wherever possible, elements / components using the same reference numerals in the drawings and embodiments represent the same or similar parts.

[0039] figure 1 Shown is an equivalent circuit diagram of a capacitor structure 10 suitable for an integrated circuit (integrated circuit) according to an embodiment of the present invention. Please refer to figure 1 , the capacitor structure 10 includes a metal-oxide semiconductor (MOS) capacitor CM and two metal capacitors CP and CI with different structures. Wherein, the metal oxide semiconductor capacitor CM has a first terminal T1 and a second terminal T2, and the first terminal T1 can be coupled to a first voltage, such as a system voltage (system voltage) VDD or a positive supply voltage (Positive supply voltage), and the second terminal T2 can be coupl...

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Abstract

The invention discloses a capacitor structure applicable to an integrated circuit. The capacitor structure comprises a metal-oxide semiconductor capacitor and two metal capacitors different in structure, wherein the metal-oxide semiconductor capacitor is provided with a first terminal point and a second terminal point, and the two metal capacitors are formed on the metal-oxide semiconductor capacitor and are respectively coupled between the first terminal point and the second terminal point. Capacitance of the capacitor structure can reach a design value in the limited chip area, and the capacitor structure is high in current magnitude.

Description

technical field [0001] The present invention relates to a semiconductor structure, and in particular to a capacitor structure suitable for use in integrated circuits. Background technique [0002] With the increase of the integration of semiconductor components, the size of the components is gradually reduced, and the space as a capacitor is relatively smaller and smaller (it is forced to reduce the chip area available for the capacitor plate), and therefore The capacitance value of the capacitor is reduced. And after entering the deep sub-micron (deep sub-micron) process, the problem of capacitance value reduction of the capacitor is even more serious. Contents of the invention [0003] In view of this, the present invention proposes a capacitor structure suitable for use in integrated circuits, whose capacitance value can reach the design value in a limited chip area, and has the characteristic of flowing a larger current than the traditional fork metal capacitor . ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L27/08
Inventor 陈天龙
Owner PHISON ELECTRONICS