Polycrystalline silicon ingot manufacturing apparatus, polycrystalline silicon ingot manufacturing method, and polycrystalline silicon ingot

Abstract

Provided are a polycrystalline silicon ingot manufacturing apparatus whereby production yield of a polycrystalline silicon is significantly improved by reducing a portion where oxygen concentration is locally high at the bottom, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot. A polycrystalline silicon ingot manufacturing apparatus (10) has: a crucible (20) having a rectangular cross-section; an upper heater (43) disposed above the crucible (20); and a lower heater (33) disposed below the crucible (20). The manufacturing apparatus solidifies a silicon melt (3) upward in one direction from bottom surface (21), said melt being contained in the crucible (20), and the manufacturing apparatus is characterized in being provided with an auxiliary heater (50) which heats, on the bottom surface (21) side of the crucible (20), at least a part of the side wall portion (22) of the crucible (20).

Description

technical field [0001] The present invention relates to a polycrystalline silicon ingot manufacturing device for unidirectionally solidifying silicon melt stored in a crucible to manufacture a polycrystalline silicon ingot, a method for manufacturing a polycrystalline silicon ingot, and a polycrystalline silicon ingot obtained by the manufacturing method. [0002] This application claims priority based on Japanese Patent Application No. 2010-164774 for which it applied in Japan on July 22, 2010, The content is used for this specification. Background technique [0003] To manufacture a polycrystalline silicon wafer, as described in Patent Document 1, for example, first, a polycrystalline silicon ingot is sliced ​​into predetermined thicknesses to manufacture polycrystalline silicon slices. Next, a polysilicon wafer is produced by cutting the polysilicon slice into a predetermined size. This polycrystalline silicon wafer is mainly used as a raw material of a substrate for a s...

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Problems solved by technology

[0019] However, when a polycrystalline silicon ingot is enlarged in this way, a portion with a locally high oxygen concentration tends to be easily formed at the portion located on the bottom side of the crucible as described above, so it is necessary to cut and remove the bottom side of the polycrystalline silicon ingot largely, and efficient production cannot be achieved. polysilicon wafer

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