Method for improving optical proximity simulation from exposure result

An optical proximity, photomask technology, used in optics, microlithography exposure equipment, originals for optomechanical processing, etc. question

Active Publication Date: 2013-04-03
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Generally speaking, the more OPC data needed to construct a good OPC model, the better, but this also means that it will take a lot of time to meet this demand
Other problems still exist: it is difficult to clarify the variables of line width measurement, the SEM line width measurement machine can only provide width and length information, and cannot display corner information, etc.

Method used

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  • Method for improving optical proximity simulation from exposure result
  • Method for improving optical proximity simulation from exposure result
  • Method for improving optical proximity simulation from exposure result

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Embodiment Construction

[0033] The method of the present invention can obtain an optical proximity correction model for outputting patterns on a photomask by collecting acceptable adjusted simulation parameters. These adjusted simulation parameters can be obtained through the method of the present invention, and the adjusted error value will be within a predetermined range.

[0034] Figure 1-3 The method of the invention for improving optical proximity simulations based on the results of an exposure according to the invention is described. figure 1 A flowchart of the method of the present invention is shown. First, exposure information from actual exposure results is provided. There are multiple exposure data in the exposure information, which means that in order to achieve a successful exposure action and obtain a successful exposure result, multiple exposure data obtained from the exposure information of the exposure result must be determined. For example, the above-mentioned exposure data may ...

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Abstract

A method for improving an optical proximity simulation is disclosed. First, multiple exposure data are determined. An original simulation result corresponding to the exposure result and generated from multiple original simulation parameters is provided. Then, an original deviation value from the original simulation result and the exposure result is verified to determine whether it is within a predetermined range. Next, the original simulation parameters are adjusted to obtain adjusted simulation parameters. The adjusted simulation parameters whose adjusted deviation value is within the predetermined range are collected to obtain an optical proximity correction model for outputting a pattern on a reticle.

Description

technical field [0001] The present invention relates to a method of improving optical proximity simulation based on actual exposure results to output correct patterns on photomasks. More particularly, the present invention relates to a method for improving optical proximity simulation based on actual exposure results by collecting adjusted simulation parameters with errors less than a predetermined value to output correct patterns on a photomask. Background technique [0002] When constructing an optical proximity correction (OPC) model, the quality of line width measurement data on a wafer is one of the most important indicators. Fitting logic method and maximal algorithm method are widely used in today's line width measurement. However, there are still some problems in the existing OPC data collection practices for constructing OPC models. [0003] Generally speaking, the more OPC data needed to construct a good OPC model, the better, but this also means that it will tak...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F7/20
CPCG03F1/36
Inventor 黄登烟
Owner NAN YA TECH
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