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Production process of Z5-degree high-quality piezoelectric crystal

A production process, piezoelectric crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high product price, low product quality, low product qualification rate, etc., and achieve the control of product quality. , Improve the coping ability, the effect of simple process

Active Publication Date: 2013-04-10
北京石晶光电科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Z5° high-quality piezoelectric crystals have high requirements for Q value, corrosion tunnels, and inclusions. Effective control technology is required to produce piezoelectric crystals required for high-quality tuning fork products; the existing Z5° high-quality piezoelectric The production process of crystal is backward, resulting in low production efficiency, high product price, low product qualification rate and low product quality

Method used

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Embodiment Construction

[0010] The technical solutions of the present invention will be described in further detail below through specific implementation methods.

[0011] A production process of Z5 ° high-quality piezoelectric crystal, the production process comprises the following steps:

[0012] Step 1. Obtain a large-scale ordinary piezoelectric seed crystal, and select a Z5°-cut F1-level corrosion tunnel piezoelectric seed crystal;

[0013] Step 2. Mount the large-scale ordinary piezoelectric seed crystal and the Z5°-cut F1 grade corrosion tunnel piezoelectric seed crystal on the ordinary piezoelectric block and the 5-degree piezoelectric block respectively, and then install the ordinary piezoelectric block and the 5-degree piezoelectric baffle are bound on the same crystal frame respectively; wherein, the 5-degree piezoelectric baffle is bound in a horizontal hanging manner, and the 5-degree piezoelectric baffle is a piezoelectric baffle with an L-shaped cross section , and the 5-degree piezoe...

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Abstract

The invention provides a production process of Z5-degree high-quality piezoelectric crystal. The production process comprises the following steps of: obtaining a large-scale common piezoelectric seed crystal, and selecting a Z5-degree cut F1-grade etch-channel piezoelectric seed crystal; respectively hanging the common piezoelectric seed crystal and the Z5-degree cut F1-grade etch-channel piezoelectric seed crystal on a common piezoelectric shielding plate and a 5-degree piezoelectric shielding plate, and then respectively binding the common piezoelectric shielding plate and the 5-degree piezoelectric shielding plate on the same lattice, wherein the 5-degree piezoelectric shielding plate is bound in a horizontal hanging manner, and the common piezoelectric shielding plate is bound in a vertical hanging manner; and placing the hung lattice in a high-pressure autoclave to grow. The production process has the advantages of simple procedure, easiness in control on product quality, low cost and high reliability.

Description

technical field [0001] The invention relates to a Z5° high-quality piezoelectric crystal, and specifically relates to a production process of a Z5° high-quality piezoelectric crystal. Background technique [0002] Z5° high-quality piezoelectric crystals have high requirements for Q value, corrosion tunnels, and inclusions. Effective control technology is required to produce piezoelectric crystals required for high-quality tuning fork products; the existing Z5° high-quality piezoelectric The production process of crystal is backward, resulting in low production efficiency, high product price, low product qualification rate and low product quality. [0003] In order to solve the above existing problems, people have been seeking an ideal technical solution. Contents of the invention [0004] The object of the present invention is to address the deficiencies of the prior art, thereby providing a production process of Z5° high-quality piezoelectric crystal with simple process,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/10C30B29/18
Inventor 赵世强
Owner 北京石晶光电科技股份有限公司