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TiB2/Si-Al electronic packaging composite material and preparation method of TiB2/Si-Al electronic packaging composite material

A composite material and electronic packaging technology, applied in the field of electronic packaging material preparation, can solve the problem of difficult diffusion of Ti, and achieve the effect of solving the coarsening and refining size

Inactive Publication Date: 2013-04-17
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The distribution of Ti on the growth surface of primary silicon is not uniform, and it is easy to enrich in the twin grooves and surface depressions, making it difficult for Ti to diffuse into the melt.

Method used

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  • TiB2/Si-Al electronic packaging composite material and preparation method of TiB2/Si-Al electronic packaging composite material
  • TiB2/Si-Al electronic packaging composite material and preparation method of TiB2/Si-Al electronic packaging composite material
  • TiB2/Si-Al electronic packaging composite material and preparation method of TiB2/Si-Al electronic packaging composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Preparation of 1.0wt% TiB 2 / 60wt% Si-Al composites. Put pure Si with a block size of 4 to 6 mm and a weight of 18 kg and industrial pure Al with a weight of 12 kg into a crucible of an intermediate frequency induction furnace, and heat it up to melt it. Heat to 1130°C and hold for 15 minutes. Then add 1.0wt% K in the melt 2 TiF 6 and KBF 4 Mix in salt. Stir well with a graphite stirrer for 10 minutes and then keep warm for 15 minutes. Scrape off surface residue. Preparation of 1.0wt% TiB by Spray Deposition Forming 2 / 60wt% Si-Al composites. The selection of process parameters is as follows: atomization gas: nitrogen; atomization pressure: 0.7MPa; deposition distance: 610mm; diameter of guide pipe: 4.0mm. Hot isostatic pressing process parameters are selected as follows: pressure 150MPa, temperature 590℃, and pressure holding for 4h. The working medium is argon. 1.0wt%TiB at 25℃ 2 The thermal expansion coefficient of / 60wt%Si-Al composite is 8.6×10 -6 K -...

Embodiment 2

[0024] Preparation of 1.0wt% TiB 2 / 70wt%Si-Al composites. Put pure Si with a block size of 4-6 mm and a weight of 21 kg and industrial pure Al with a weight of 9 kg into a crucible of an intermediate frequency induction furnace, and heat it up to melt it. Heat to 1210°C and hold for 15 minutes. Then add 1.0wt% K in the melt 2 TiF 6 and KBF 4 Mix in salt. Stir well with a graphite stirrer for 10 minutes and then keep warm for 15 minutes. Scrape off surface residue. Preparation of 1.0wt% TiB by Spray Deposition Forming 2 / 70wt%Si-Al composites. The selection of process parameters is as follows: atomization gas: argon; atomization pressure: 0.8MPa; deposition distance: 640mm; diameter of guide tube: 4.1mm. Hot isostatic pressing process parameters are selected as follows: pressure 165MPa, temperature 600℃, pressure holding for 4h. The working medium is argon. 1.0wt%TiB at 25℃ 2 The thermal expansion coefficient of / 70wt%Si-Al composite is 6.7×10 -6 K -1 , the therm...

Embodiment 3

[0026] Preparation of 2.0wt% TiB 2 / 60wt% Si-Al composites. Put pure Si with a block size of 4 to 6 mm and a weight of 18 kg and industrial pure Al with a weight of 12 kg into a crucible of an intermediate frequency induction furnace, and heat it up to melt it. Heat to 1130°C and hold for 15 minutes. Then add 2.0wt% K in the melt 2 TiF 6 and KBF 4 Mix in salt. Stir well with a graphite stirrer for 10 minutes and then keep warm for 15 minutes. Scrape off surface residue. Preparation of 2.0wt% TiB by Spray Deposition Modeling 2 / 60wt% Si-Al composites. The selection of process parameters is as follows: atomization gas: argon; atomization pressure: 0.8MPa; deposition distance: 620mm; diameter of guide pipe: 4.2mm. The hot isostatic pressing process parameters are selected as follows: pressure 170MPa, temperature 600℃, pressure holding for 4h. The working medium is argon. 2.0wt%TiB at 25℃ 2 The thermal expansion coefficient of / 60wt%Si-Al composite is 8.3×10 -6 K -1 ...

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Abstract

The invention provides a preparation method of a TiB2 / Si-Al composite material, which belongs to the technical field of preparing electronic packaging materials. The preparation method comprises five steps of preparing mixed salt, smelting 60-70wt% of Si-Al alloy, casting and synthesizing TiB2 granules in situ, spraying and depositing to form the TiB2 / Si-Al composite material, and performing hot isostatic pressing on the TiB2 / Si-Al composite material. The preparation method provided by the invention effectively refines the size of primary crystalline silicon based on not affecting the thermal expansion coefficient, the thermal conductivity and the density of the Si-Al alloy, and solves a coarsening problem of the primary crystalline silicon in the process of heating and heat preservation between two phase areas of the Si-Al alloy. The composite material is widely applied to novel packaging or radiating materials needed by telecommunications, aeronautics, astronautics, national defenses and other relevant industrial electronic devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of electronic packaging materials, and in particular provides a TiB 2 The preparation method of Si-Al composite material can effectively refine the size of primary silicon and solve the problem of primary silicon in Si-Al alloy without affecting the thermal expansion coefficient, thermal conductivity and density of Si-Al alloy. The problem of coarsening when the phase area is heated and kept warm. The composite material is widely used in new packaging or heat dissipation materials required by electronic components in telecommunications, aviation, aerospace, national defense and other related industries. Background technique [0002] Si-Al alloy has been proved to be a material system whose comprehensive properties basically meet the requirements of advanced electronic packaging. Because: (1) The thermal expansion coefficient of the material matches that of Si or GaAs chips, and the dimension...

Claims

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Application Information

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IPC IPC(8): C22C29/18C22C1/02
Inventor 杨滨卢毅张磊王西涛
Owner UNIV OF SCI & TECH BEIJING
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