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Method for growing crystals in crystal three-dimension motion solution

A technology for three-dimensional movement and crystal growth, which is applied in the directions of crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of affecting crystal quality, crystal growth speed and crystal quality, etc. The effect of quality

Inactive Publication Date: 2015-04-15
CHONGQING UNIV
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Problems solved by technology

[0003] However, the above-mentioned crystal transformation method utilizes the beneficial effect of convection on solute transport to increase the crystal growth rate, but it also has the following serious disadvantages: there are three types of regions that are easy to form inclusions on the crystal surface: facing the liquid flow The stagnant zone, the convective vortex zone facing the liquid flow, and the downstream zone of the convective boundary layer on the side wall
The existence of these regions greatly affects the quality of the crystal, so that the crystal growth rate and the crystal quality cannot be balanced

Method used

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  • Method for growing crystals in crystal three-dimension motion solution
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  • Method for growing crystals in crystal three-dimension motion solution

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Embodiment

[0019] This embodiment takes KDP crystal growth as an example, including five process steps of solution preparation, solution filtration, solution overheating, seed crystal fixation, and crystal three-dimensional motion growth. The specific steps are:

[0020] 1) Solution preparation: according to the solubility formula S t =13.76+0.359 t +0.0041 t 2 (where S t The unit is gKDP / 100mL water, t The unit is °C), the raw material required to prepare 10 L saturated solution at 55 °C is 4.59 kg, weigh this amount of high-grade pure raw material, add it to the measured 10 L double-distilled water, and prepare 10 L of saturated solution;

[0021] 2) Solution filtration: Filter the solution with a filter paper with a pore size of 0.45 μm and a filter membrane with a pore size of 0.22 μm to obtain a pure solution;

[0022] 3) Solution superheating: superheat the pure solution at 20°C above the saturation temperature, that is, at 75°C for 24 hours to obtain a growth solution;

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Abstract

The invention belongs to the technical field of crystal growth and relates to a method for growing crystals in a crystal three-dimension motion solution. The method comprises the following steps: preparing a certain-temperature saturated solution according to a solubility formula; filtering, overheating at a temperature 20DEG C higher than a saturated temperature to obtain a growth solution; fixing a seed crystal glue on the top end of a crystal pulling rod; inoculating the solidified glue into a crystal cultivation device, and allowing seed crystals to undergo a slight solution and regeneration process and then enter a crystal growth phase; and allowing the crystal pulling rod to drive the crystals to periodically move in the growth phase in the following three-dimensional manner: from left to right, from bottom to top, from outside to inside, from right to left, from top to bottom, and from inside to outside. In the invention, all crystal surfaces of a crystal undergo the motion relative to the solution in a manner that all the crystal surfaces are repeatedly used as a head-on surface, a side surface and a back surface by turns in the growth process, so an area having defects comprising inclusions and the like is eliminated in present methods, the large crystal surface and the uniform super-saturation degree are maintained, thereby the method is a method for the rapid and all-around crystal growth in a high-quality solution.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a method for growing crystals in a solution in which the crystals move three-dimensionally, which is suitable for rapid, high-quality and all-round growth of water-soluble crystals. Background technique [0002] The methods of growing crystals in solution include cooling method, circulating flow method and evaporation method. In these methods, the solute boundary layer is thinned by allowing the crystal to move relative to the solution to increase the crystal growth rate. The most commonly used method is the crystal rotation method, that is, the crystal rotates or revolves in the solution. In the circulating flow method, while the crystal rotates, the solution also flows in from the lower part of the crystal grower and flows out from the upper part. The crystal conversion method is undoubtedly beneficial to the improvement of the crystal growth rate. [0003] However, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/00C30B28/04
Inventor 李明伟曹亚超周川尹华伟程旻胡志涛王邦国
Owner CHONGQING UNIV
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