Serial rom unit and its reading method
A unit group and storage unit technology, applied in read-only memory, information storage, static memory, etc., can solve the problem of low storage density, and achieve the effect of reducing space waste and saving area
Active Publication Date: 2016-07-06
SUZHOU ZHAOXIN SEMICON TECH CO LTD
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- Description
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- Application Information
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Problems solved by technology
[0008] The purpose of the present invention is to overcome the defect of low storage density of traditional ROM units, adopt source-end programmable technology, and provide an integrated circuit design scheme in which four ROM units share a source end
Method used
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Embodiment Construction
[0031] The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention.
[0032] Such as Figure 5 Shown is the circuit diagram of Embodiment 1 of the serial ROM unit disclosed by the present invention, which includes a total of four MOS transistors in the first storage unit group and the second storage unit group, respectively MOS31, MOS32, MOS33 and MOS34, wherein the first storage unit The group includes MOS31 and MOS32 connected in series, and the second memory cell group includes MOS33 and MOS34 connected in series. After the two MOS transistors in the first memory cell group and the second memory cell group are connected in series, they are connected together in a back-to-back manner. , that is, the gates of MOS31 and MOS32 are respectively connected to word lines WL30 and WL31, the drain of MOS31 is connected to bit line BL30, the drain of MOS32 is c...
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The invention discloses a serial read only memory (ROM) unit and a reading method of the serial ROM unit; the ROM unit at least comprises a first memory unit group and a second memory unit group which are connected with each other in a back-to-back way; the first memory unit group and the second memory unit group have the same structure; the first memory unit group comprises a first metal oxide semiconductor (MOS) tube and a second MOS tube which are connected in series; drain electrodes of the first MOS tube and the second MOS tube are respectively connected with a first bit line and a second bit line in a programmable way; grid electrodes of the first MOS tube and the second MOS tube are respectively connected with a first word line and a second word line; and when being read, the information corresponding to the serial ROM unit can be directly read through the first bit line and the second bit line, so that four MOS tubes can share the same source end VSS, the space waste caused by process rules can be reduced, and the area is saved.
Description
technical field [0001] The invention relates to the field of integrated circuit design, in particular to a printed circuit board layout design and a reading method of serial ROM units. Background technique [0002] In integrated circuit design, for memory, it is an eternal pursuit to increase the storage density and reduce the storage cost per unit of information, that is, to reduce the area, especially under advanced process conditions (such as 40nm and below processes), due to the limitations of process rules, The ROM unit area cannot be reduced proportionally with the process size, and the storage area of unit information is too large. [0003] Traditional ROM units use back-to-back drawing, that is, share the source VSS, such as figure 1 Shown is the circuit diagram of the ROM unit in the traditional background technology 1, which includes two MOS transistors MOS11 and MOS12 using back-to-back drawing method, the source terminals of these two MOS transistors are conne...
Claims
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IPC IPC(8): G11C16/26G11C16/06
Inventor 于跃郑坚斌
Owner SUZHOU ZHAOXIN SEMICON TECH CO LTD