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Novel multilayer structure silicon carbide photoconductive switch and its preparation method

A photoconductive switch, multi-layer structure technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of no reduction in switch conduction characteristics, high breakdown voltage, small conduction current, etc., and reduce the mismatch rate. , The effect of improving breakdown voltage and improving withstand voltage performance

Inactive Publication Date: 2015-09-23
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Aiming at the shortcomings of the traditional silicon carbide photoconductive switch, such as low breakdown voltage or small conduction current, the present invention provides a novel multilayer silicon carbide photoconductive switch and its preparation method, which includes device technology, device modeling, etc. Starting from the first aspect, by solving the problems of filamentary current suppression, carrier concentration, ohmic contact, etc., the withstand voltage performance of SiC photoconductive switches has been greatly improved, and SiC materials can be used in harsh environments such as high frequency, high temperature, and electromagnetic radiation. The unique advantages of the switch without reducing the conduction characteristics of the switch while increasing the breakdown voltage of the switch

Method used

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  • Novel multilayer structure silicon carbide photoconductive switch and its preparation method
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Embodiment 1

[0037] combine figure 1 , figure 2 , the preparation method of the novel multilayer structure silicon carbide photoconductive switch of the present embodiment, its steps are as follows:

[0038] 1) Select the substrate

[0039] A research-grade vanadium-doped silicon carbide wafer is selected as the substrate 1, and the thickness of the silicon carbide wafer is 300 mm;

[0040] 2) Epitaxial growth on the silicon surface of the substrate

[0041] Use high-temperature chemical vapor deposition (HTCVD) to epitaxially grow on the 0001 plane of the silicon surface of the substrate 1 at 4° off-axis and doped with electronic-grade purity nitrogen (N) to form the first doped layer 2 with a doping concentration of 5× 10 18 cm -3 , the growth temperature is 1580 ℃, the reaction gas flow rate is 20 mL / min of silane, 10 mL / min of propane, 20 mL / min of nitrogen, 80 L / min of carrier gas hydrogen, and the pressure is maintained at 50 mbar; the formed first doped layer 2 The thicknes...

Embodiment 2

[0050] combine figure 2 , the preparation method of the novel multilayer structure silicon carbide photoconductive switch of the present embodiment, its steps are:

[0051] 1) Select the substrate

[0052] A research-grade intrinsic silicon carbide wafer is selected as the substrate 1, and the thickness of the silicon carbide wafer is 330 mm;

[0053] 2) Epitaxial growth on the silicon surface of the substrate

[0054] Using high temperature chemical vapor deposition (HTCVD), on the 0001 plane of the silicon surface of the substrate 1, the off-axis 8° epitaxial growth is doped with electron-grade pure nitrogen (N) to form the first doped layer 2 with a doping concentration of 3×10 18 cm -3 , the growth temperature is 1500 ℃, the reaction gas is composed of silane, propane and nitrogen, the gas flow rate is 0.5 sccm, the carbon-to-silicon ratio (C / Si) is 2, the carrier gas hydrogen flow rate is 3000 sccm, and the reaction chamber pressure is 100 mbar. The thickness of the...

Embodiment 3

[0063] combine figure 2 , the preparation method of the novel multilayer structure silicon carbide photoconductive switch of the present embodiment, its steps are:

[0064] 1) Select the substrate

[0065] A research-grade vanadium-doped silicon carbide wafer is selected as the substrate 1, and the thickness of the silicon carbide wafer is 350 mm;

[0066] 2) Epitaxial growth on the silicon surface of the substrate

[0067] On the silicon surface of substrate 1, nitrogen (N) of electronic grade purity is epitaxially doped on the 0001 surface of the silicon surface of substrate 1 at an off-axis 8° by using a high-temperature chemical vapor deposition (HTCVD) process to form a 20 mm thick, doped The concentration is 2×10 18 cm -3 N-type first doped layer 2, the growth temperature is 1600 ℃, the reaction gas flow rate is 22 mL / min of silane, 13 mL / min of propane, 22 mL / min of nitrogen, 83 L / min of carrier gas hydrogen, and the pressure is maintained at 200 mbar ;

[0068]...

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Abstract

The invention discloses a novel multi-layer-structure silicon carbide photoconductive switch and a preparation method of the novel multi-layer-structure silicon carbide photoconductive switch, and belongs to the technical field of wide bandgap semiconductors. The novel multi-layer-structure silicon carbide photoconductive switch comprises a substrate, wherein the substrate is composed of a semi-insulating silicon carbide chip mixed with vanadium or an intrinsic silicon carbide chip, a conductive-type mixed layer is arranged on a silicone surface of the substrate, and the mixing type is N-type. Two conductive-type mixed layers are arranged on a carbon surface of the substrate, the two conductive-type mixed layers are sequentially a second mixed layer and a third mixed layer from inside to outside, the mixing type of the second mixed layer is P-type, the mixing type of the third mixed layer is N-type, an anode of the switch is arranged at one side of the silicone surface, and the cathode of the switch is arranged at one side of the carbon surface. The novel multi-layer-structure silicon carbide photoconductive switch improves the breakdown voltage of the switch and does not lower the conductive performance of the switch at the same time.

Description

technical field [0001] The invention belongs to the technical field of wide bandgap semiconductors, and more specifically relates to a novel multilayer structure silicon carbide photoconductive switch and a preparation method thereof. Background technique [0002] Pulse power systems, such as high-power lasers, shock radars, high-power microwave generators, etc., require high-power high-speed switches to generate high-amplitude narrow pulses. Traditional pulse power switches are gas discharge switches, such as hydrogen thyristors, spark gaps, etc. Although these switches have high withstand voltage and strong flow capacity, they have problems such as large size, long turn-on time, turn-on jitter, electromagnetic radiation, and frequent maintenance. shortcoming. The photoconductive switch has the advantages of ps-level trigger jitter, ns-level turn-on time, high current density, high withstand voltage, small size, low loss, controllable, photoelectric isolation, and no elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/103H01L31/0224H01L31/18
CPCY02P70/50
Inventor 周郁明姜浩楠
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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