Diffusion device and method for zinc in photodetector fabrication
A technology of photodetector and diffusion method, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of large temperature fluctuation range, complicated operation, dangerous use, etc., achieve precise control of diffusion depth, diffusion temperature fluctuation Small, easy-to-use effects
A technology of photodetector and diffusion method, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of large temperature fluctuation range, complicated operation, dangerous use, etc., achieve precise control of diffusion depth, diffusion temperature fluctuation Small, easy-to-use effects
CN103151248BActive Publication Date: 2016-04-20WUHAN TELECOMM DEVICES
Image
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] In order to facilitate a further understanding of the structure and method of the invention and the effects achieved, the preferred embodiments are described in detail below in conjunction with the accompanying drawings.
[0025] In order to obtain good photoelectric characteristics in the InGaAs detector process, a good PN junction must be obtained through diffusion, and the purpose of the present invention is to perform zinc diffusion in intrinsic indium phosphide.
[0026] Such as figure 1 As shown, the zinc diffusion device in the photodetector production of the present invention includes a heating furnace 6, a quartz tube 5 with both ends closed, a gas control system 1, a vacuum system 18, a quartz boat 9, and is used to push the quartz boat 9 into the quartz tube 5 The vacuum propulsion device 11 and the boat board 10 connected with the vacuum propulsion device 11 are provided with a furnace door 12 near the end of the vacuum propulsion device 11 on the boat board...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a zinc diffusion device and a diffusion method thereof in manufacturing of a photoelectric detector. The device comprises a heating furnace, a quartz tube, a gas control system, a vacuum system, a quartz boat and a vacuum pushing device, wherein both ends of the quartz tube are sealed, the quartz boat is used for accommodating a diffusion source and an epitaxial wafer to be diffused, the vacuum pushing device is used for pushing the quartz boat into the quartz tube, one end of the quartz tube is positioned in a hearth of the heating furnace and is used as a constant-temperature area, the other end of the quartz tube is positioned on the outside of the hearth of the heating furnace, is used as a cooling area and is maintained in a room temperature state, the gas control system is used for filling nitrogen into the quartz tube, and the vacuum system is used for vacuumizing the quartz tube by a vacuum pipeline. The method has the advantages that the risk of using an oxy-hydrogen flame to seal the quartz tube in the traditional tube-closing diffusion process is avoided, the pollution at the epitaxial wafer by sucking residual slag into the quartz tube at the negative pressure in the quartz tube when the quartz tube is opened is avoided, and the problems of nonuniform temperature, difficult control of diffusion depth and overlong cooling time in the traditional tube-opening diffusion process are solved. The method is favorable for batch diffusion.
Description
technical field [0001] The invention relates to a zinc diffusion device and a diffusion method in the field of semiconductor optoelectronic devices, in particular to a novel zinc diffusion device and diffusion method in the manufacturing process of indium gallium arsenic photodetectors. Background technique [0002] Traditional indium gallium arsenic epitaxial wafers grow indium gallium arsenic absorber layer and intrinsic indium phosphide top layer on n-type indium phosphide base material by organic vapor phase epitaxy deposition (MOCVD), so it is necessary to go through various processes during the manufacturing process. A doping technique, such as: diffusion, ion implantation, etc., to form a P-type diffusion region. Because the diffusion process of zinc is simple, the surface damage of the epitaxial wafer is small, and excellent performance can be obtained, so it is widely used. [0003] The traditional closed-tube diffusion process is to put the epitaxial wafer and the...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
20 Apr 2016
Publication
CN103151248B
- IPC
- H01L21/223; H01L21/67
- Inventors
- 胡艳; 岳爱文