Reference current source generating circuit in complementary metal-oxide-semiconductor (CMOS) integrated circuit
A reference current source and circuit generation technology, which is applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., and can solve problems such as being affected by temperature
Active Publication Date: 2015-04-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
Since the realization of the reference voltage has nothing to do with the absolute resistance of the resistor, a reference voltage that is basically not affected by temperature can be obtained, but the reference current realized by the ratio of the reference voltage to the resistance is affected by temperature
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[0045] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0046] see figure 1 , which is a schematic diagram of Embodiment 1 of a reference current source generating circuit in a CMOS integrated circuit provided by the present invention.
[0047] The reference current source generation circuit in the CMOS integrated circuit provided in this embodiment includes: a current generation module 10, a startup module 20, a reference voltage generation module 30 and a reference current generation module 40;
[0048] The starting module 20 is used to start the current generating module 10, and when the current generating module 10 starts to work, the starting module 20 quits working;
[0049] Since the current generating module 10 has a degenerate bias point when it is powered on, in this state, the c...
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The invention provides a reference current source generating circuit in a complementary metal-oxide-semiconductor (CMOS) integrated circuit. The reference current source generating circuit comprises a starting module used for starting a current generating module. After the current generating module starts working, the start module quits working. The current generating module generates current in direct proportion to absolute temperature. A reference voltage generating module generates reference voltage irrelevant to the temperature through combination of the current in the direct proportion to the absolute temperature and P-type semi-conductor and N-type semi-conductor (PN) junction voltage with a negative temperature coefficient. A reference current generating module generates current complementing the absolute temperature through combination of the reference voltage and resistance with a positive temperature coefficient. The current complementing the absolute temperature and the current in the direct proportion to the absolute temperature are combined to generate reference current irrelevant to the temperature. The reference current source generating circuit generates the reference current irrelevant to the temperature by utilizing combination of the current with the positive temperature coefficient and the current with the negative temperature coefficient while the reference current realized by a ratio of the reference voltage and the resistance is influenced by the temperature in the prior art.
Description
technical field [0001] The invention relates to the technical field of current source generation, in particular to a reference current source generation circuit in a CMOS integrated circuit. Background technique [0002] The reference current source is a very important module in the CMOS integrated circuit. The reference current source provides the current bias for the CMOS integrated circuit. Therefore, the performance of the reference current source directly affects the performance of the entire CMOS integrated circuit. [0003] In the prior art, the generation of the reference current source is generally a bandgap reference circuit realized by using bipolar transistors. [0004] The working principle of the bandgap reference circuit is to use the positive temperature coefficient of the difference between the two base-emitter junction voltages (ΔVbe) and the negative temperature coefficient of the base-emitter voltage (Vbe) of the bipolar transistor to add in a certain rat...
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IPC IPC(8): G05F3/30
Inventor 姜宇郭桂良阎跃鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI