Scanning transmission electron microscope imaging method for sample dislocation
A technology of transmission electron microscope and imaging method, which is applied in the direction of material analysis using measurement of secondary emissions, can solve problems that have not yet been seen, and achieve the effect of improving recognition.
Active Publication Date: 2013-06-26
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Obviously, using STEM to image dislocations can avoid the interference of other diffraction contrasts such as equal-thickness fringes in TEM imaging. The report of the electron microscope imaging method, and the differential imaging of different types of dislocations is crucial for the study of semiconductor material defects
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[0014] The specific implementation of the scanning transmission electron microscope imaging method for sample dislocations provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0015] A scanning transmission electron microscope observation method for sample dislocation according to the present invention, wherein figure 2 Shown is a schematic diagram of the imaging principle of the scanning transmission electron microscope. The GaN sample is taken as an example to illustrate and follow the steps below:
[0016] 1. In the normal TEM mode, tilt the GaN sample, take the diffraction spectrum of the [10-10] crystal orientation of the GaN sample, and calibrate it. For the calibrated diffraction spectrum, see the attached image 3 .
[0017] 2. According to the calibration in step 1, tilt the GaN sample so that the sample is successively at the diffraction vector g=0002 (see attached Figure 4 Photos in a) and g=11-20 (s...
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The invention provides a scanning transmission electron microscope imaging method for sample dislocation. The scanning transmission electron microscope imaging method comprises the steps of: under an ordinary transmission electron microscope mode, tilting a sample, shooting a diffraction spectrum of the sample in first crystal orientation, and calibrating the diffraction spectrum; tilting the sample to enable dislocations of the sample to be respectively imaged sequentially in a two-beam diffraction state; and switching an electron microscope to enter a scanning transmission mode, collecting images by using a high-angle annular dark field detector, and respectively obtaining scanning transmission electron microscope dislocation images corresponding to two-beam diffractions. The scanning transmission electron microscope imaging method has the advantages that when the sample is in two-beam diffraction positions of different diffraction vectors, as for the dislocations in different types, the scanning transmission electron microscope images express a consistent response relationship with the existing transmission electron microscope dislocation two-beam diffraction contrast, i.e. the method is used for observing and distinguishing the dislocations in different types in semiconductor materials.
Description
technical field [0001] The invention relates to a scanning transmission electron microscope imaging method for semiconductor sample dislocation, and belongs to the technical field of material structure analysis and detection. Background technique [0002] The intuitive imaging observation of dislocations by transmission electron microscope is an important content in the quality evaluation and defect research of semiconductor materials. Traditionally, people perform "dual-beam" imaging of the sample in the normal transmission mode (TEM) of the TEM electron microscope. The basic step is to place the sample in a "dual-beam diffraction" position. attached figure 1 Shown is the diffraction spectrum of the sample when it is in the double-beam diffraction position. At this time, the transmission spots in the sample diffraction spectrum (attached figure 1 the diffraction spot marked as 0000) and a specific diffraction spot whose brightness is much larger than other diffraction sp...
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Inventor 牛牧童吴东昌张锦平黄凯张燚董晓鸣曾雄辉徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI