Efficient light-emitting diode containing metal photonic crystal
A technology of metal photonic crystals and light-emitting diodes, applied in semiconductor devices, electrical components, circuits, etc., to achieve the effects of improving directionality, enhancing spontaneous radiation efficiency, and flexible design means
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[0019] In this embodiment, an InGaN light-emitting diode is taken as an example to illustrate the technical solution of the present invention.
[0020] When the substrate (1) is GaN, the n-type layer (2) is n-GaN, the multiple quantum well (3) is InGaN / GaN, and the p-type layer (4) is p-GaN, the metal photonic crystal (5) is arranged periodically When the dielectric column (6) is formed, it is an InGaN high-efficiency light-emitting diode containing metal photonic crystals.
[0021] The thickness of the metal photonic crystal (5) is 10nm-100nm, and the material can be gold, silver or aluminum. When the light waves emitted by the recombination of carriers and holes in the InGaN / GaN multi-quantum well (3) pass through the p-type layer (4) and radiate outward to the metal photonic crystal (5), surface plasmon waves will be excited. When the thickness of the metal photonic crystal (5) is 10nm-100nm, the periodically arranged dielectric pillars (6) provide reciprocal lattice vecto...
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