Preparation method of analysis samples

A sample and target technology, applied in the field of analysis sample preparation, which can solve the problems of SEM or TEM analysis quality degradation, voids and other problems of analysis samples

Inactive Publication Date: 2013-07-10
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The purpose of the present invention is to provide a method for preparing an analysis sample to solve the problem that the sample with a hi

Method used

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  • Preparation method of analysis samples
  • Preparation method of analysis samples
  • Preparation method of analysis samples

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Embodiment Construction

[0027] The analytical sample preparation method proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific examples. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] The core idea of ​​the present invention is to form the metal protective layer in the target observation area after the filling is formed in the target trench or through hole first. Because, before depositing the metal protective layer, the target groove or via hole has been filled with fillers, depositing the metal protective layer is equivalent to carrying out on the surface of the sample substrate without groove or via hole, so there will be no The voids...

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Abstract

The invention provides a preparation method of analysis samples. The method comprises: 1, providing a sample substrate comprising an object observation area with at least one object groove or through hole; and 2, using an FIB to deposit fillers into the object grooves or the through holes. Cavities are not formed in the object grooves or the through holes when a metal protective layer is subsequently deposited because the object grooves or the through holes of the analysis samples prepared by the preparation method of the analysis samples are filled by the fillers, thereby fundamentally preventing drawing stamps of cutting caused by the cavities, as well as plasma damage caused by insufficient thickness of the metal protective layer, and thus effectively improving SEM / TEM analytical quality of the analysis samples.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for preparing an analysis sample. Background technique [0002] In the semiconductor manufacturing process, it is often necessary to analyze the structure and material of the device. Usually, a scanning electron microscope (Scanning Electron Microscope, SEM) and a transmission electron microscope (Transmission electron microscope, TEM) are used to observe and analyze the microscopic state of the sample to be analyzed. [0003] The working principle of SEM is to scan the sample with a very thin electron beam, and to excite secondary electrons on the surface of the sample. The number of secondary electrons is related to the incident angle of the electron beam, that is to say, to the surface structure of the sample. It is collected by the detector, where it is converted into an optical signal by the scintillator, and then converted into an electrical signal ...

Claims

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Application Information

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IPC IPC(8): G01N1/28
Inventor 陈强
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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