The invention relates to the field of the manufacture of a
semiconductor, and in particular relates to a preparation method of a TEM (transverse electric and
magnetic field) sample. The preparation method comprises the following steps of: S1, depositing a first
coating layer on the upper surface of a substrate; S2,
cutting the first
coating layer to the lower surface of the substrate; S3, preparing a second
coating layer to cover the surface of a first cross section; S4,
cutting the remaining first coating layer on a first sample structure to the lower surface of the remained substrate; S5,
cutting the second coating layer to the lower surface of the remained substrate to form a TEM sample structure with a second cross section; and S6, continuously analyzing the target cross section of the TEM sample. According to the preparation method, a
protection layer depositing method is improved, and the
protection layer depositing time is increased, so that the thickness of the TEM sample can meet an optimal analysis thickness (40-60nm), a
diffusion impervious layer and a
copper interface can be clearly analyzed in the process of analysis, and the analysis quality of the TEM sample can be improved.