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Method of forming a semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, can solve problems such as satisfaction

Active Publication Date: 2013-07-10
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While existing methods of forming stressor regions of IC devices are often adequate for their intended purpose, existing methods are not entirely satisfactory in all respects

Method used

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  • Method of forming a semiconductor device
  • Method of forming a semiconductor device
  • Method of forming a semiconductor device

Examples

Experimental program
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Embodiment Construction

[0027] The following disclosure provides a number of different embodiments or examples for implementing different components of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, the first component formed on or over the second component in the following description may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component is formed on the first component and the second component. An embodiment in which the first part and the second part may not be in direct contact between two parts. Additionally, the present disclosure may repeat reference numbers and / or letters in various instances. This repetition is for simplicity and clarity and does not in itself dictate a relationship between the various em...

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Abstract

A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming spacers adjoining sidewalls of the gate stacks, wherein at least one of the spacers extends beyond an edge the isolation feature. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film. Also provided is a method of forming the semiconductor device.

Description

technical field [0001] The present invention relates generally to the field of semiconductor technology, and more particularly, to methods of fabricating semiconductor devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone rapid development. In the course of IC evolution, functional density (i.e., the number of interconnected devices per single-sided chip area) has typically Increase. This scaling down process often provides advantages by increasing product efficiency and reducing associated costs. This scaling down also increases the complexity of handling and manufacturing ICs and requires similar developments in IC manufacturing for these advances to be realized. [0003] For example, when semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) are scaled through various technology nodes, strained source / drain features (e.g., stressed source regions) are implemented to enhance carrier m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8238H01L21/336
CPCH01L21/26506H01L21/2658H01L21/26593H01L21/823807H01L21/823814H01L21/823878H01L29/165H01L29/6653H01L29/66636H01L29/7847H01L29/7848
Inventor 王参群蔡俊雄
Owner TAIWAN SEMICON MFG CO LTD