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MIM capacitor and manufacturing method thereof

A manufacturing method and capacitor technology, which are used in the manufacture of semiconductor/solid-state devices, electric solid-state devices, circuits, etc., can solve the problems of easy falling off of the insulating medium layer, and achieve the effect of improving the connection performance and reliability performance.

Active Publication Date: 2013-07-10
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a kind of MIM capacitor and its manufacturing method, to solve the problem that the insulating dielectric layer in the MIM capacitor in the prior art is easy to fall off, so as to achieve the purpose of improving the performance and reliability of the MIM capacitor

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  • MIM capacitor and manufacturing method thereof
  • MIM capacitor and manufacturing method thereof

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Embodiment Construction

[0029] The MIM capacitor proposed by the present invention and its manufacturing method will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0030] The core idea of ​​the present invention is that in the MIM capacitor, the insulating layer is layered into a buffer insulating layer and a bulk insulating layer, and the buffer insulating layer with a thinner film thickness contacts the first metal layer, so that the entire insulating layer can be made large Part of the stress is released, thereby preventing the insulation layer from falling off from the first metal layer, and improving the connect...

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Abstract

The invention provides an MIM capacitor and manufacturing method thereof. The MIM capacitor comprises a first metal layer and an insulating layer formed on the first metal layer. The insulating layer comprises a buffering insulating layer formed on the metal layer and at least one body insulating layer formed on the buffering insulating layer. The thickness of the buffering insulating layer is smaller than that of the body insulating layer. Due to adoption of the MIM capacitor, film-falling-off phenomena of the insulating layer can be effectively reduced, so that connection performance and reliability of the MIM capacitor can be improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a MIM capacitor and a manufacturing method thereof. Background technique [0002] Capacitors are passive components commonly used in VLSI, which mainly include polysilicon-insulator-polysilicon (PIP, Polysilicon-Insulator-Polysilicon), metal-insulator-silicon (MIS, Metal-Insulator-Silicon) and metal-insulator - Metal (MIM, Metal-Insulator-Metal) and other categories. Among them, because MIM capacitors cause the least interference to transistors and can provide better linearity (Linearity) and symmetry (Symmetry), they have been more widely used, especially in the field of mixed signals and radio frequency. [0003] Such as figure 1 As shown, generally the MIM capacitor 100 includes a substrate 101 , a first metal layer 102 , an insulating dielectric layer 103 and a second metal layer 104 . Wherein, the first metal layer 102 is formed on the substrate 1...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L21/02
Inventor 童智钊
Owner SHANGHAI HUALI MICROELECTRONICS CORP