A method for preparing trench semiconductor discrete devices
A discrete device and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor terminal structure, poor device breakdown voltage and reliability, and difficult to generate
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Embodiment 1
[0082] Such as figure 1 As shown, the epitaxial layer 200 is placed above the substrate 10. First, an oxide layer 400 (with a thickness of 0.3 μm to 1.5 μm oxide hard mask) is formed on the epitaxial layer by deposition or thermal growth, and then on the oxide layer. A photoresist coating 1000 is deposited and then patterned through a trench mask to expose portions of the oxide layer.
[0083] Such as figure 2 As shown, after dry etching the oxide layer exposed by patterning the trench mask, the epitaxial layer is exposed, and then the photolithographic coating is removed.
[0084] Such as image 3 As shown, implant P-type dopants on the surface of the silicon wafer (the dose is 2e12 / cm 3 to 2e14 / cm 3 ), the part covered by the original oxide layer 400 has not been implanted, and the part not covered by the original oxide layer will be injected into the surface of the epitaxial layer to form a P-type region. The P-type dopant can be B11 (boron boron ).
[0085] Such as ...
Embodiment 2
[0100] The technical scheme of the present embodiment is roughly the same as that of embodiment 1, and its difference only lies in:
[0101] In the above example 1 Figure 5 Before etching the trench, first deposit a layer of oxide layer and seal the opening width of the trench mask in the oxide layer ranging from 0.2 μm to 0.6 μm. The width of the sealed opening can be 0.2 μm or 0.3 μm or 0.4 μm or 0.5 μm or 0.6 μm, depending on the preparation method, the advantage of this step is that some trench mask openings are implanted with P-type dopants (P-type 1 region) but not The trench is opened, the terminal structure of the device is better, so the breakdown voltage of the device is higher and more stable, and then the oxide layer is dry-etched to remove the oxide layer on the opening and expose the epitaxial layer on the opening; After etching the trench, only those openings that are not sealed by the precipitated oxide layer are opened. The trench (1.0 μm to 7.0 μm in depth ...
Embodiment 3
[0103] The technical scheme of the present embodiment is roughly the same as that of embodiment 1, and its difference only lies in:
[0104] In the above example 1 Figure 15 Before etching the contact hole trench, first deposit a layer of (LPCVD) oxide layer, and then perform dry etching on the oxide layer to remove the oxide layer in the opening of the contact hole trench, exposing the epitaxial layer in the opening; etched contact hole trenches. Other steps are basically the same as in Embodiment 1, and the cross-section of the device is as follows Figure 19 shown.
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