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Silicon germanium on insulator (SGOI) or strained silicon on insulator (sSOI) preparation method based on quantum well structure

A quantum well and structured surface technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve problems such as poor material quality and excessive buffer layer thickness, and achieve the effect of avoiding waste

Active Publication Date: 2013-07-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing SGOI or sSOI based on a quantum well structure, which is used to solve the problem of excessive thickness of the buffer layer and material gap caused by the first growth and then injection in the prior art. Poor quality and other issues

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  • Silicon germanium on insulator (SGOI) or strained silicon on insulator (sSOI) preparation method based on quantum well structure
  • Silicon germanium on insulator (SGOI) or strained silicon on insulator (sSOI) preparation method based on quantum well structure
  • Silicon germanium on insulator (SGOI) or strained silicon on insulator (sSOI) preparation method based on quantum well structure

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Embodiment 1

[0022] As shown in the figure, this embodiment provides a method for preparing SGOI or sSOI based on a quantum well structure, and the method includes the following process:

[0023] The first step: forming Si on the surface of the substrate 1-x Ge x / Ge or Si / Si 1-x Ge x After the material layer of the quantum well structure is formed, it is annealed to make the surface Si 1-x Ge x The material relaxes.

[0024] For example, epitaxial growth of Si on SOI substrate 1-x Ge x / Ge or Si / Si 1-x Ge x The material layer of the formed quantum well structure, where 0 figure 1 As shown, preferably, the Si in the grown quantum well structure 1-x Ge x The thickness of the / Ge or Si material layer is in the range of ten nanometers to nearly a hundred nanometers, and does not exceed the critical thickness; subsequently, the formed structure is annealed to make the surface Si 1-x Ge x The material relaxes, such as figure 2 shown. Preferably, H or He ion implantation and annea...

Embodiment 2

[0032] The method for preparing SGOI or sSOI based on the quantum well structure of this embodiment includes the following processes:

[0033] First, according to Embodiment 1, after performing the first step to the third step, the following Figure 4structure shown, then repeat the second and third steps in Example 1; then, grow Si on the surface of the formed structure at a low temperature 1-x Ge x / Si material layer; finally, at least part of the obtained structure is transferred to the surface of the oxygen-containing layer of the oxygen-containing substrate by intelligent lift-off technology to form a SGOI or sSOI structure.

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Abstract

The invention provides a silicon germanium on insulator (SGOI) or strained silicon on insulator (sSOI) preparation method based on a quantum well structure. According to the method, annealing treatment is conducted after a material layer, of the quantum well structure, formed by Sil-xGex / Ge or Sil-xGex is formed on the surface of a substrate, then, Sil-xGex and / or silicon (Si) are / is enabled to grow at low temperature on the formed structure surface, and finally a material layer, formed by Sil-xGex / Ge or Sil-xGex, of the quantum well structure is formed and annealing treatment is conducted. After the circle is repeated for two or three times, a material layer is formed in the mode that the Sil-xGex / Si is enabled to grow at low temperature on the formed structure surface, and intelligent peeling technology is used for transferring the formed Sil-xGex or Si material layer to the surface of an oxygen containing layer of an oxygen containing substrate. Consequently, a high-quality SGOI or sSOI structure is formed.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing SGOI or sSOI based on a quantum well structure. Background technique [0002] Strained silicon on insulator materials are generally divided into two types. One is that the strained silicon material is directly bonded to the insulating layer of the silicon substrate to form sSi / SiO 2 / Si sandwich structure (sSOI); the other is a SiGe layer between the strained silicon and the insulating layer, forming sSi / SiGe / SiO 2 / Si four-layer structure (ie SGOI structure). The existence of tensile stress in the strained silicon layer (i.e., sSi layer) is beneficial to improve the electron mobility, but the effect on the hole mobility is not obvious, and the SGOI structure is used as two kinds of double channel materials, because the strained silicon layer The combination of tensile stress and compressive stress in the SiGe layer can simultaneously increase the mobility o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
Inventor 张苗陈达刘林杰狄增峰薛忠营
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI