Air extractor, low-pressure chemical vapor deposition equipment and chemical vapor deposition method

A low-pressure chemical vapor phase and chemical vapor deposition technology, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve serious and particle pollution problems, improve the particle condition, ensure the quality of film formation, reduce The effect of wet cleaning times

Active Publication Date: 2013-08-14
CSMC TECH FAB2 CO LTD
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a low-pressure chemical vapor deposition equipment to improve the serious problem of particle pollution in the existing low-pressure chemical vapor deposition equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Air extractor, low-pressure chemical vapor deposition equipment and chemical vapor deposition method
  • Air extractor, low-pressure chemical vapor deposition equipment and chemical vapor deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] In order to make the above objects, features and advantages of the present invention more obvious and comprehensible, specific embodiments of the invention will be described in detail below in conjunction with the accompanying drawings.

[0044] The device and equipment of the present invention can be widely used in various fields, and can be made of various suitable materials, which will be described below through specific examples. Of course, the present invention is not limited to this specific example. Common replacements known to those skilled in the art are undoubtedly included within the protection scope of the present invention.

[0045] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the structural proportions in the schematic diagrams are only schematic and should not be taken as limitations of the present invention.

[0046]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an air extractor, low-pressure chemical vapor deposition equipment and a chemical vapor deposition method. An air extractor is used for extracting a gas in a furnace tube of low-pressure chemical vapor deposition equipment and is characterized in that the air extractor comprises a first valve, a second valve and a third valve which are connected in parallel and are connected with an air exhaust opening through conduits, and a suction pump which is connected with the first, second and third valves through conduits, wherein the first valve, the second valve and the third valve respectively operate with the suction pump to reduce air pressure in the furnace tube, and the rate of reducing the air pressure in the furnace tube is decreased successively. By the utilization of the air extractor, the problem that particulate pollution in present low-pressure chemical vapor deposition equipment is severe can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a low-pressure chemical vapor deposition equipment. Background technique [0002] Today, with the great development of semiconductor technology, low-pressure chemical vapor deposition (LPCVD) equipment is widely used in the deposition of thin films such as polysilicon, silicon dioxide and silicon nitride. During deposition, a gaseous chemical substance containing atoms or molecules required to form a film is introduced into the deposition chamber. The chemical substance mixes and reacts in the deposition chamber, and finally gathers on the surface of the wafer to form the desired solid film and gaseous products. In this thin film formation process, in addition to forming a thin film on the surface of the wafer, deposits must also accumulate on the inner wall surface of the deposition chamber. Therefore, after multiple depositions, when the attachment on the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
Inventor 孙雷军
Owner CSMC TECH FAB2 CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap